Investigation of Performance Improvement in Drain Extended Longitudinal FinFETs for Thermal-aware Sustainable Electronics Applications

Abstract

This work presents a comprehensive investigation of GaN-based Junctionless Drain Extended Longitudinal FinFET (DELFinFET) using Sentaurus TCAD simulations, targeting thermally robust and energy efficient semiconductor devices as a means to reduce the environmental footprint of electronic devices. Introducing a longitudinal fin achieves superior lateral electric field modulation, improved carrier transport, and enhanced electric control. This helps in improving the key analog performance metrics such as sub-threshold slope, leakage current (Ioff), transconductance (gm), and the switching ratio (Ion/Ioff). The results obtained highlight the potential of DELFinFET for low-power applications. A comparative evaluation is performed between the designed device and other device configurations to verify the effectiveness of the design. © The Author(s), under exclusive licence to Springer Nature B.V. 2025.