Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

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dc.contributor.authorUdayashankar, N.K.
dc.contributor.authorBhat, H.L.
dc.date.accessioned2026-02-05T11:00:31Z
dc.date.issuedGrowth and characterization of indium antimonide and gallium antimonide crystals
dc.description.abstract2001
dc.identifier.citationBulletin of Materials Science, 2001, 24, 5, pp. 445-453
dc.identifier.issn2504707
dc.identifier.urihttps://doi.org/10.1007/BF02706714
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/28018
dc.subjectCrystal defects
dc.subjectCrystal growth
dc.subjectCrystal structure
dc.subjectElectric conductivity measurement
dc.subjectEnergy dispersive spectroscopy
dc.subjectEtching
dc.subjectGallium compounds
dc.subjectHall effect
dc.subjectPhotoluminescence
dc.subjectSynthesis (chemical)
dc.subjectTransport properties
dc.subjectX ray diffraction analysis
dc.subjectBridgman techniques
dc.subjectChemical etching
dc.subjectDefect density
dc.subjectDopants
dc.subjectGallium antimonide
dc.subjectHall measurement
dc.subjectIndium antimonide
dc.subjectPhotoluminescence spectra
dc.subjectIndium compounds
dc.titleIndium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

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