Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.
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Growth and characterization of indium antimonide and gallium antimonide crystals
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Abstract
2001
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Keywords
Crystal defects, Crystal growth, Crystal structure, Electric conductivity measurement, Energy dispersive spectroscopy, Etching, Gallium compounds, Hall effect, Photoluminescence, Synthesis (chemical), Transport properties, X ray diffraction analysis, Bridgman techniques, Chemical etching, Defect density, Dopants, Gallium antimonide, Hall measurement, Indium antimonide, Photoluminescence spectra, Indium compounds
Citation
Bulletin of Materials Science, 2001, 24, 5, pp. 445-453