Synthesis of single-phase stoichiometric InTe thin films for opto-electronic applications
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Date
2019
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Publisher
Academic Press
Abstract
Mono-phased and stoichiometric InTe thin films were successfully prepared using vacuum evaporation technique. A systematic variation in substrate temperature and annealing temperature along with annealing duration resulted stoichiometric and single phase InTe films. The annealing treatment of as-deposited films resulted in the structural transformation from mixed phase of In <inf>2</inf> Te <inf>3</inf> and InTe to mono-phased InTe. The electrical conductivity of stoichiometric single phase films was found to be 15.612 ? ?1 cm ?1 . The optical band gap of stoichiometric InTe films was found to be 1.42 eV and absorption coefficient of the films was of the order of 10 6 cm ?1 . Electrical properties of mono-phased films accompanied with optical properties such as direct band gap and absorption coefficient makes them suitable for optoelectronic devices. © 2019 Elsevier Ltd
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Keywords
Annealing, Electric properties, Energy gap, Indium compounds, Optical properties, Optoelectronic devices, Semiconductor materials, Tellurium compounds, Thin films, Vacuum evaporation, Absorption co-efficient, Annealing temperatures, Electrical conductivity, Optoelectronic applications, Structural, Structural transformation, Substrate temperature, Vacuum evaporation technique, Optical films
Citation
Superlattices and Microstructures, 2019, 129, , pp. 220-225