SOT-MRAM Based Main Memory: An Alternative to DRAM
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Date
2022
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
Data is generated enormously today and to process this we need large memories with high speed and optimized power consumption. Conventional DRAM based system which were used as memory in computing systems for several decades are facing challenges in scalability and power consumption. In this regard non-volatile memories with excellent scalability and minimal power consumption are studied extensively. This paper analyzes the impact of introducing SOT-MRAM a non-volatile main memory device as an alternative to DRAM. Experimental results show an average power reduction of 46.09% with an increase in performance up to 30% when DRAM is replaced with SOT-MRAM for embedded system workloads. © 2022 IEEE.
Description
Keywords
DRAM, SOT-MRAM, STT-MRAM
Citation
2022 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2022, 2022, Vol., , p. -
