Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes
| dc.contributor.author | Rao, K.G. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | Shivakumar, G.K. | |
| dc.date.accessioned | 2020-03-30T10:02:29Z | |
| dc.date.available | 2020-03-30T10:02:29Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics. | en_US |
| dc.identifier.citation | AIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602 | en_US |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/7533 | |
| dc.title | Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes | en_US |
| dc.type | Book chapter | en_US |