Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes
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Date
2011
Authors
Rao, K.G.
Bangera, K.V.
Shivakumar, G.K.
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Abstract
p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics.
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AIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602