Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

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dc.contributor.authorRao, G.K.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-06T06:40:38Z
dc.date.issued2011
dc.description.abstractp-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. © 2011 American Institute of Physics.
dc.identifier.citationAIP Conference Proceedings, 2011, Vol.1349, PART A, p. 601-602
dc.identifier.issn0094243X
dc.identifier.urihttps://doi.org/10.1063/1.3606001
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/33056
dc.subjectHeterojunction
dc.subject-VI Semiconductor
dc.subjectThin Film
dc.subjectVacuum Deposition
dc.subjectZinc Telluride
dc.titleConduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

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