11.39 fJ/conversion-step 780 kS/s 8 bit switched capacitor-based area and energyefficient successive approximation register ADC in 90 nm complementary metal-oxide- semiconductor
| dc.contributor.author | Narasimaiah, J.D. | |
| dc.contributor.author | Laxminidhi, T. | |
| dc.contributor.author | Bhat, M.S. | |
| dc.date.accessioned | 2026-02-05T09:31:21Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | In this study, a design technique for low-energy consumption and area-efficient successive approximation register analogue-to-digital converter (ADC) is presented. Digital-to-analogue conversion equivalent voltage is acquired utilising passive sharing of charge between two unit capacitors and integration of the shared charge onto an input sample-and-hold capacitor, via a switched capacitor integrator circuit. The architecture is less parasitic sensitive and low noise, yielding an area and energyefficient ADC. To demonstrate the efficacy of the proposed technique, a ±350 mV 8 bit 0.78 MS/s ADC is designed in a 90 nm complementary metal-oxide-semiconductor process. The ADC core has a small area footprint of 0.00145 mm2 and has a figure-of-merit of 11.39 fJ/conv-step. © 2018, The Institution of Engineering and Technology. | |
| dc.identifier.citation | IET Circuits, Devices and Systems, 2018, 12, 3, pp. 249-255 | |
| dc.identifier.issn | 1751858X | |
| dc.identifier.uri | https://doi.org/10.1049/iet-cds.2017.0029 | |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/25162 | |
| dc.publisher | Institution of Engineering and Technology journals@theiet.org | |
| dc.subject | Approximation theory | |
| dc.subject | CMOS integrated circuits | |
| dc.subject | Dielectric devices | |
| dc.subject | Energy utilization | |
| dc.subject | Metallic compounds | |
| dc.subject | Metals | |
| dc.subject | MOS capacitors | |
| dc.subject | Oxide semiconductors | |
| dc.subject | Transistors | |
| dc.subject | Analogue to digital converter (ADC) | |
| dc.subject | Complementary metal oxide semiconductor process | |
| dc.subject | Complementary metal oxide semiconductors | |
| dc.subject | Low energy consumption | |
| dc.subject | Successive approximation register | |
| dc.subject | Successive approximation register adc | |
| dc.subject | Switched capacitor | |
| dc.subject | Switched capacitor integrator | |
| dc.subject | Analog to digital conversion | |
| dc.title | 11.39 fJ/conversion-step 780 kS/s 8 bit switched capacitor-based area and energyefficient successive approximation register ADC in 90 nm complementary metal-oxide- semiconductor |
