11.39 fJ/conversion-step 780 kS/s 8 bit switched capacitor-based area and energyefficient successive approximation register ADC in 90 nm complementary metal-oxide- semiconductor
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Date
2018
Journal Title
Journal ISSN
Volume Title
Publisher
Institution of Engineering and Technology journals@theiet.org
Abstract
In this study, a design technique for low-energy consumption and area-efficient successive approximation register analogue-to-digital converter (ADC) is presented. Digital-to-analogue conversion equivalent voltage is acquired utilising passive sharing of charge between two unit capacitors and integration of the shared charge onto an input sample-and-hold capacitor, via a switched capacitor integrator circuit. The architecture is less parasitic sensitive and low noise, yielding an area and energyefficient ADC. To demonstrate the efficacy of the proposed technique, a ±350 mV 8 bit 0.78 MS/s ADC is designed in a 90 nm complementary metal-oxide-semiconductor process. The ADC core has a small area footprint of 0.00145 mm2 and has a figure-of-merit of 11.39 fJ/conv-step. © 2018, The Institution of Engineering and Technology.
Description
Keywords
Approximation theory, CMOS integrated circuits, Dielectric devices, Energy utilization, Metallic compounds, Metals, MOS capacitors, Oxide semiconductors, Transistors, Analogue to digital converter (ADC), Complementary metal oxide semiconductor process, Complementary metal oxide semiconductors, Low energy consumption, Successive approximation register, Successive approximation register adc, Switched capacitor, Switched capacitor integrator, Analog to digital conversion
Citation
IET Circuits, Devices and Systems, 2018, 12, 3, pp. 249-255
