Uniaxial stress induced band structure changes in h-SiB

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dc.contributor.authorManju, M.S.
dc.contributor.authorAjith, K.M.
dc.contributor.authorValsakumar, M.C.
dc.date.accessioned2026-02-06T06:38:09Z
dc.date.issued2018
dc.description.abstractUniaxial stress was applied along zigzag and armchair directions in compressive and tensile regime to see if there is any metal-semiconductor transition in SiB. Metallicity increased with increasing stress both in compression and tension in zigzag and armchair directions instead of a metal-semiconductor transition. SiB maintained energetical stability in the whole range of applied stress. © 2018 Author(s).
dc.identifier.citationAIP Conference Proceedings, 2018, Vol.1953, , p. -
dc.identifier.issn0094243X
dc.identifier.urihttps://doi.org/10.1063/1.5033052
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/31485
dc.publisherAmerican Institute of Physics Inc. subs@aip.org
dc.titleUniaxial stress induced band structure changes in h-SiB

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