Uniaxial stress induced band structure changes in h-SiB

Abstract

Uniaxial stress was applied along zigzag and armchair directions in compressive and tensile regime to see if there is any metal-semiconductor transition in SiB. Metallicity increased with increasing stress both in compression and tension in zigzag and armchair directions instead of a metal-semiconductor transition. SiB maintained energetical stability in the whole range of applied stress. © 2018 Author(s).