Normally Off Ga2o3 On Insulator Junction Less Drain Extended Field Effect Transistor

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dc.contributor.authorNikhil, K. S
dc.contributor.authorManukrishna, V. R
dc.contributor.authorNational Institute of Technology Karnataka, Surathkal
dc.date.accessioned2024-12-19T14:03:02Z
dc.date.available2024-12-19T14:03:02Z
dc.date.issued2023-07-28
dc.descriptionPatent Filed Date: 13.05.2023 Published Date: 28.07.2023en_US
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/18423
dc.language.isoenen_US
dc.publisherIndian Patent Office, Chennaien_US
dc.relation.ispartofseries202341033746;
dc.subjectGa2o3en_US
dc.subjectDrain Extended Fielden_US
dc.subjectTransistoren_US
dc.titleNormally Off Ga2o3 On Insulator Junction Less Drain Extended Field Effect Transistoren_US
dc.typeOtheren_US

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