Normally Off Ga2o3 On Insulator Junction Less Drain Extended Field Effect Transistor
Date
2023-07-28
Authors
Nikhil, K. S
Manukrishna, V. R
National Institute of Technology Karnataka, Surathkal
Journal Title
Journal ISSN
Volume Title
Publisher
Indian Patent Office, Chennai
Abstract
Description
Patent Filed Date: 13.05.2023 Published Date: 28.07.2023
Keywords
Ga2o3, Drain Extended Field, Transistor