Characterization of thin film Al/p-CdTe schottky diode

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dc.contributor.authorMahesha, M.G.
dc.contributor.authorKasturi, V.B.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:36:55Z
dc.date.issued2008
dc.description.abstractA study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed. © TÜB?TAK.
dc.identifier.citationTurkish Journal of Physics, 2008, 32, 3, pp. 151-156
dc.identifier.issn13000101
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/27735
dc.subjectAluminum
dc.subjectCadmium alloys
dc.subjectCadmium compounds
dc.subjectChemical activation
dc.subjectSchottky barrier diodes
dc.subjectSemiconducting cadmium telluride
dc.subjectSolids
dc.subjectThermal evaporation
dc.subjectThick films
dc.subjectThin film devices
dc.subjectThin films
dc.subjectband diagrams
dc.subjectBand gaps
dc.subjectBarrier height (BH)
dc.subjectCurrent voltage (I V) characteristics
dc.subjectJunction capacitances
dc.subjectSchottky contacts
dc.subjectSchottky diodes
dc.subjectActivation energy
dc.titleCharacterization of thin film Al/p-CdTe schottky diode

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