Effect of substrate temperature and film thickness on the thermoelectric properties of In2Te3 thin films
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Date
2017
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Publisher
Elsevier Ltd
Abstract
Herein, the thermoelectric properties of vacuum deposited In<inf>2</inf>Te<inf>3</inf> thin films were investigated by varying the substrate temperature and the thickness of the films. The thermo-electro motive force of the prepared films was found to increase with an increase in the substrate temperature up to 423 K and then decrease at 473 K due to the presence of mixed-phase structure. The maximum thermoelectric power of 220 ?V/K was observed for the films deposited at 423 K substrate temperature, which was found to decrease with increase in thickness. The films deposited at 423 K with 150 nm thickness showed maximum power factor of 27 ?Wm?1K?2 at 450 K. These observations are explained on the basis of structural, morphological and compositional changes. © 2017 Elsevier B.V.
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Keywords
Deposition, Phase structure, Thermoelectric equipment, Thermoelectricity, Vapor deposition, X ray diffraction, Compositional changes, Maximum power factor, Substrate temperature, Thermo-Electric materials, Thermoelectric, Thermoelectric properties, Thickness of the film, Thin films
Citation
Journal of Alloys and Compounds, 2017, 715, , pp. 224-229