Temperature-dependent in situ Cd substitution at Zn sites in Cu2ZnSnS4 thin films via sol–gel method: Experimental and DFT insights

Abstract

We report a systematic study of in situ cadmium (Cd) substitution at Zinc (Zn) sites in Cu<inf>2</inf>ZnSnS<inf>4</inf> (CZTS) thin films synthesized via a scalable sol–gel route, with sulfurization carried out at 300 °C, 400 °C, and 500 °C. X-ray diffraction and Raman spectroscopy demonstrate that higher sulfurization temperatures along with increased Cd content progressively suppress the secondary Cu<inf>2</inf>SnS<inf>3</inf> phase, while field-emission SEM and atomic force microscopy reveal enhanced grain growth and a smoother granular surface. UV–Vis absorption measurements show a continuous band-gap reduction from 1.43 eV in undoped CZTS to 1.20 eV at the highest Cd level, corroborated by a red shift in photoluminescence emission. X-ray photoelectron spectroscopy and density functional theory (GGA-PBE and HSE06) with orbital-projected density of states (p-DOS) analyses attribute this narrowing to localized Cd-induced states near the conduction band minimum and lattice expansion effects. Additionally, preliminary photovoltaic characterization demonstrated improved device performance for the Cd:CZTS solar cell compared to the pristine CZTS cell, exhibiting higher photocurrent density and enhanced external quantum efficiency. These results confirm that precise control of sulfurization temperature and Cd incorporation not only tailors the electronic structure and band gap but also suppresses undesirable secondary phases, offering a promising route to optimize kesterite thin films for high-efficiency photovoltaic applications. © 2025 Elsevier B.V.