Faculty Publications
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Item Nonlinear optical studies on 1,3-disubstituent chalcones doped polymer films(Elsevier, 2009) Poornesh, P.; Shettigar, S.; Umesh, G.; Manjunatha, K.B.; Prakash Kamath, K.; Sarojini, B.K.; Narayana, B.We report the measurements of the third-order nonlinear optical properties of recently synthesized and characterized two different 1,3-disubstituent chalcones doped PMMA films, with the prospective of reaching a good compromise between processability and high nonlinear optical properties. The measurements were done using nanosecond Z-scan at 532 nm. The Z-scan spectra reveal a large negative nonlinear refraction coefficient n2 of the order 10-11 esu and the molecular two photon absorption cross section is 10-46 cm4 s/photon. The doped films exhibit good optical power limiting property under nanosecond regime and the two photon absorption (TPA) is the dominating process leading to the nonlinear behavior. The improvement in the nonlinear properties has been observed when methylenedioxy group is replaced by dimethoxy group due to increase in conjugation length. The observed nonlinear parameters of chalcone derivatives doped PMMA film is comparable with stilbazolieum derivatives, a well-known class of optical materials for photonics and biophotonics applications, which suggests that, these moieties have potential for the application of all-optical limiting and switching devices. © 2008 Elsevier B.V. All rights reserved.Item Studies on third-order nonlinear optical properties and reverse saturable absorption in polythiophene/poly (methylmethacrylate) composites(Springer Verlag, 2009) Poornesh, P.; Umesh, G.; Hegde, P.K.; Manjunatha, M.G.; Manjunatha, K.B.; Vasudeva Adhikari, A.V.We report here the studies on third-order nonlinear optical properties of two novel polythiophene composite films investigated using the Z-scan technique. The measurements were carried out using a Q-switched, frequency doubled Nd:YAG laser producing 7 nanosecond laser pulses at 532 nm. Z-scan results reveal that the composite films exhibit self-defocusing nonlinearity. The real and imaginary parts of the third-order nonlinear optical susceptibility were of the order 10-12 esu. The effective excited-state absorption cross section was found to be larger than the ground state absorption cross section, indicating that the operating nonlinear mechanism is reverse saturable absorption (RSA). The polythiophene composite films also exhibit good optical power limiting of the nanosecond laser pulses. The nonlinear optical parameters are found to increase on increasing the strength of the electron-donor group, indicating the dependence of ? (3) on the electron-donor/acceptor units of polythiophenes. © 2009 Springer-Verlag.Item Nonlinear optical study of palladium Schiff base complex using femtosecond differential optical Kerr gate and Z-scan techniques(2012) Rudresha, B.J.; Badekai Ramachandra, B.R.; Ramakrishna, D.; Anthony, J.K.; Lee, H.W.; Rotermund, F.A femtosecond differential optical Kerr gate (DOKG) and Z-scan techniques, have been applied to investigate the third-order optical nonlinearity of composite film of the coordination complex [PdLPPh 3] (L=N-(2-pyridyl)-N'-(salicylidene)hydrazine, PPh 3=triphenylphosphine) . Film exhibits superior nonlinear optical properties in the near-infrared spectral region. The nonlinear response time and third-order nonlinear optical susceptibility of complex were found to be?90 fs and 3.9×10 -10 esu, respectively. The Z-scan result shows that saturable absorption property of the film and its nonlinear absorption coefficient of the sample was found to be -23 cm/GW. © 2011 Elsevier Ltd. All rights reserved.Item Study of the aluminium oxide doped zinc oxide thin films prepared by thermal evaporation technique(2012) Palimar, S.; Banger, K.V.; Shivakumar, G.K.The present study reports the observations made on investigations carried out to study structural, optical and electrical properties of aluminium oxide doped ZnO thin films obtained by thermal evaporation technique. Films obtained are found to be amorphous in nature with smooth and continuous surface. Room temperature conductivity of the film is found to be 5x10 3 U -1 cm -1 with visible region transmittance of above 95%. The optical energy gap of the film is found to be 3.25 eV. From the calculations of activation energy, it is observed that the doped ZnO film has two donor levels, one at 142 meV and other at 43 meV. A detailed analysis of the result is reported. © 2012 Asian Network for Scientific Information.Item Third-order nonlinear optical properties of Mn doped ZnO thin films under cw laser illumination(Elsevier B.V., 2013) Nagaraja, K.K.; Pramodini, S.; Santhosh Kumar, A.; Nagaraja, H.S.; Poornesh, P.; Kekuda, D.We report the measurements of third-order nonlinear optical properties of undoped zinc oxide and manganese doped zinc oxide thin films with different doping concentrations investigated using z-scan technique. Thin films were prepared by radio frequency magnetron sputtering using a compound target on glass substrate at room temperature. The structural properties of the deposited films were analysed by X-ray diffraction studies. The atomic force microscope analysis of the deposited films reveals that the grain size and roughness of the films depend on the Mn concentration. The direct energy band gap of the deposited film increases with the increase in Mn concentration in the films. The nonlinear optical measurements were carried out using a cw He-Ne laser at 633 nm wavelength. The z-scan results reveal that the films exhibit self-defocusing nonlinearity. The third-order nonlinear optical susceptibility ?(3) is found to be of the order of 10-3 esu. The films investigated here exhibit good optical power limiting at the experimental wavelength. © 2012 Elsevier B.V. All rights reserved.Item Properties of ZnO:Bi thin films prepared by spray pyrolysis technique(Elsevier Ltd, 2013) Sadananda Kumar, N.; Bangera, K.V.; Anandan, C.; Shivakumar, G.K.Undoped and Bi doped zinc oxide thin films were deposited on glass substrate at 450 °C using spray pyrolysis technique. The X-ray diffraction studies shows that Bi doped ZnO films are polycrystalline hexagonal structure with a preferred orientation along (101) direction. Crystallites size of the films decreases with increasing doping concentration. Scanning electron microscope image shows change in the surface morphology. The composition of Zn, O and Bi elements in the undoped and Bi doped ZnO films were investigated by X-ray photoelectron spectroscopy. Bi doped ZnO thin films show a transparency nearly 75% in the visible region. The optical band gap of ZnO thin films reduces from 3.25 eV to 3.12 eV with an increase in Bi concentration from 0 to 5at.% respectively. Electrical conductivity of ZnO thin films increased from 0.156 to 6.02S/cm with increasing Bi dopant concentration from 0% to 5% respectively. © 2013 Elsevier B.V. All rights reserved.Item Effect of annealing on the structural and nonlinear optical properties of ZnO thin films under cw regime(2013) Nagaraja, K.K.; Pramodini, S.; Poornesh, P.; Nagaraja, H.S.We report on the studies of the effects of annealing on the structural and third-order nonlinear optical properties of ZnO thin films deposited on quartz substrates by the RF magnetron sputtering technique. The films were annealed in the temperature range 400-1000 °C. The third-order nonlinear optical studies were carried out using the z-scan technique under continuous wave (cw) He-Ne laser irradiation at 633 nm wavelength. The effects of annealing on the structural properties were examined using x-ray diffraction and atomic force microscopy (AFM). The (0 0 2) preferred orientation increased with increase in annealing temperature up to 800 °C. The crystalline phases of SiO2 were observed at higher annealing temperatures. The appearance of an extraneous phase was confirmed by AFM images and optical transmittance spectra. The samples exhibited nonlinear absorption and nonlinear refraction under the experimental conditions. The negative sign of the nonlinear refractive index n2 indicated that the films exhibit self-defocusing property due to thermal nonlinearity. The nonlinear refractive index n2, the nonlinear absorption coefficient ?eff and the third-order optical susceptibility ?(3) were found to be of the highest orders. The estimated value of third-order optical susceptibility ?(3) was of the order of 10-3 esu. Multiple diffraction rings were observed when the samples were exposed to the laser beam. The appearance of rings was due to the refractive index change and thermal lensing. With increase in laser intensity, the variations of the self-diffraction ring patterns were studied experimentally. The films also exhibited strong optical limiting properties under cw laser excitation, and reverse saturable absorption was the dominant process leading to the observed nonlinear behaviour. © 2013 IOP Publishing Ltd.Item Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide(Springer Nature, 2013) Palimar, S.; Bangera, K.V.; Shivakumar, G.K.The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 ?–1 cm–1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 ?–1 cm–1, whereas the conductivity of indium oxide-doped films is increased up to 3.5 × 103 ?–1 cm–1. Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping. © 2012, The Author(s).Item Third harmonic generation process in Al doped ZnO thin films(2014) Abd-Lefdil, M.; Douayar, A.; Belayachi, A.; Reshak, A.H.; Fedorchuk, A.O.; Pramodini, S.; Poornesh, P.; Nagaraja, K.K.; Nagaraja, H.S.We have performed studies on the third-order nonlinear optical susceptibility of Al doped ZnO (AZO) thin films using z-scan and third harmonic generation techniques. From the present studies, it reveals that the introduction of Al in ZnO leads to substantial changes in the third-order nonlinear susceptibility. Additionally we have shown that using treatment by the 707 nm laser pulses of the Er:glass 20 ns laser also influence on the third harmonic generation. Such behavior is explained by the photoinduced charge re-occupation of the trapping levels on the borders substrate and ZnO. Further, the sign and magnitude of nonlinear absorption coefficient ?eff, nonlinear refractive index n2, real and imaginary parts of third-order nonlinear susceptibility were evaluated. Finally, the optical limiting studies for various concentrations of AZO thin films were determined. Reverse saturable absorption was the dominant process leading to the observed nonlinear behavior. © 2013 Elsevier B.V. All rights reserved.Item Structural, linear, and nonlinear optical properties of radio frequency-sputtered nitrogen-doped ZnO thin films studied using z-scan technique(Institute of Physics Publishing custserv@iop.org, 2014) Nagaraja, K.K.; Pramodini, S.; Santhosh Kumar, A.S.; Nagaraja, H.S.; Poornesh, P.The third-order nonlinear optical properties of undoped and nitrogen-doped ZnO thin films were evaluated using the z-scan technique. The films were sputter-deposited on glass substrates using radio frequency power. The He-Ne continuous wave laser operating at 633 nm was used as an irradiation source. A change in the growth mode in the nitrogen-doped films was observed. The grain size and roughness were found to be dependent on the nitrogen concentration, as shown by atomic force microscopy analysis. The optical band gap was determined and found to increase with nitrogen concentration in the films. Both nonlinear absorption and refraction nonlinearities were exhibited by the deposited films. The nonlinear refractive index n2, the nonlinear absorption coefficient ?eff and the third-order nonlinear optical susceptibility ?(3) were determined and found to be largest. Multiple diffraction ring patterns were observed when the samples were made to interact with the laser beam and were attributed to refractive index change and thermal lensing. Further, optical power-limiting experiments were performed to determine the optical-limiting threshold and clamping values for undoped and nitrogen-doped ZnO films. © 2014 Astro Ltd.
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