Faculty Publications
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Item The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres(Elsevier Ltd, 2010) Rao, K.G.; Shivakumar, G.K.; Kasturi, V.B.The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of them. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were used to ascertain the formation of discontinuous bismuth films and the proper diffusion of bismuth in ZnTe films, respectively. After doping, the carrier concentration of the ZnTe films was found to increase by an order of the magnitude. The electrical conductivity also improved significantly. The photoconductivity and photo-response properties of the doped films were also analysed. © 2010 Elsevier B.V. All rights reserved.Item Third-order nonlinear optical properties of Mn doped ZnO thin films under cw laser illumination(Elsevier B.V., 2013) Nagaraja, K.K.; Pramodini, S.; Santhosh Kumar, A.; Nagaraja, H.S.; Poornesh, P.; Kekuda, D.We report the measurements of third-order nonlinear optical properties of undoped zinc oxide and manganese doped zinc oxide thin films with different doping concentrations investigated using z-scan technique. Thin films were prepared by radio frequency magnetron sputtering using a compound target on glass substrate at room temperature. The structural properties of the deposited films were analysed by X-ray diffraction studies. The atomic force microscope analysis of the deposited films reveals that the grain size and roughness of the films depend on the Mn concentration. The direct energy band gap of the deposited film increases with the increase in Mn concentration in the films. The nonlinear optical measurements were carried out using a cw He-Ne laser at 633 nm wavelength. The z-scan results reveal that the films exhibit self-defocusing nonlinearity. The third-order nonlinear optical susceptibility ?(3) is found to be of the order of 10-3 esu. The films investigated here exhibit good optical power limiting at the experimental wavelength. © 2012 Elsevier B.V. All rights reserved.Item Diluted magnetism in Mn-doped SrZnO2 single crystals(American Institute of Physics Inc., 2013) Rahman, M.R.; Koteswararao, B.; Huang, S.H.; Kim, K.; Chou, F.C.We have investigated the magnetic properties of Mn- and Cu-substituted SrZnO2 single crystals (SrZn1-xMnxO2 and SrZn1-xCuxO2). We observed signatures of weak ferromagnetism as a sharp increase of magnetic susceptibility below 5 K even in the low-percentage (x = 0.01) of Mn-substituted single crystals. Magnetic susceptibility data measured parallel or perpendicular to the ab-plane yield anisotropic behavior with Curie-Weiss temperature of about -320 K and -410 K, respectively, suggesting the presence of strong antiferromagnetic couplings among Mn at high temperatures, similar to the Mn-doped ZnO and Fe-doped BaTiO3. In contrast, the SrZn0.99Cu0.01O 2 crystal shows paramagnetic behavior down to 2 K. © 2013 AIP Publishing LLC.Item Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide(Springer Nature, 2013) Palimar, S.; Bangera, K.V.; Shivakumar, G.K.The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 ?–1 cm–1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 ?–1 cm–1, whereas the conductivity of indium oxide-doped films is increased up to 3.5 × 103 ?–1 cm–1. Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping. © 2012, The Author(s).Item A large-scale-oriented growth of ZnO nanorod array on glass substrate: Growth, structural and photoluminoscent properties(National Institute of Optoelectronics, 2014) Santhosh Kumar, A.S.; Nagaraja, H.S.We report a modified sol gel route for one step fabrication of large scale arrays of zinc oxide (ZnO) nanorods. The method is seed layer free, and nanorods are directly attached to a substrate. We studied the effect of PVA content on growth, crystallanity, orientation, microstructure and optical properties of ZnO. The XRD patterns confirm that samples grown with PVA have good crystallanity with (002) preferred orientation. The SEM micrographs show that the 1 Wt% PVA assisted grown films are covered with large scale oriented nanorod array. Raman spectrum represents that the 1 wt% PVA assisted grown ZnO nanostructures are highly crystalline with a hexagonal wurtzite phase. The room temperature PL spectrum exhibits a strong and sharp UV emission, which confirms that the grown arrays have good optical properties with few structural defects such as oxygen vacancies and zinc interstitials.Item Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique(Springer Nature, 2014) Sadananda Kumar, N.; Bangera, K.V.; Shivakumar, G.K.Zinc oxide nanofiber thin films have been deposited on glass substrate by spray pyrolysis technique. The X-ray diffraction studies revealed that the films are polycrystalline with the hexagonal structure and a preferred orientation along (002) direction for films annealed for 1 h at 450 °C. Further increase in annealing time changes the preferred orientation to (100) direction. The scanning electron microscopic analysis showed the formation of ZnO nanofiber with an average diameter of approximately 800 nm for annealed films. The compositional analysis of nanofiber ZnO thin films were studied by time of flight secondary ion mass spectroscopy, which indicated oxygen deficiency in the films. The optical properties of annealed films have shown a variation in the band gap between 3.29 and 3.20 eV. The electrical conductivity of the as grown and annealed films showed an increase in the conductivity by two orders of magnitude with increase in annealing duration. © 2013, The Author(s).Item Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions(Springer Nature, 2015) Acharya, S.; Bangera, K.V.; Shivakumar, G.K.In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II–VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV. © 2015, The Author(s).Item ZnS semiconductor quantum dots production by an endophytic fungus Aspergillus flavus(Elsevier Ltd, 2016) Uddandarao, P.; Mohan B, R.The development of reliable and eco-friendly processes for the synthesis of metal sulphide quantum dots has been considered as a major challenge in the field of nanotechnology. In the present study, polycrystalline ZnS quantum dots were synthesized from an endophytic fungus Aspergillus flavus. It is noteworthy that apart from being rich sources of bioactive compounds, endophytic fungus also has the ability to mediate the synthesis of nanoparticles. TEM and DLS revealed the formation of spherical particles with an average diameter of about 18 nm and 58.9 nm, respectively. The ZnS quantum dots were further characterized using SEM, EDAX, XRD, UV-visible spectroscopy and FTIR. The obtained results confirmed the synthesis of polycrystalline ZnS quantum dots and these quantum dots are used for studying ROS activity. In addition this paper explains kinetics of metal sorption to study the role of biosorption in synthesis of quantum dots by applying Morris-Weber kinetic model. Since Aspergillus flavus is isolated from a medicinal plant Nothapodytes foetida, quantum dots synthesized from this fungus may have great potential in broad environmental and medical applications. © 2016 Elsevier B.V. All rights reserved.Item Influence of annealing on the linear and nonlinear optical properties of Mn doped ZnO thin films examined by z-scan technique in CW regime(Elsevier B.V., 2016) Nagaraja, K.K.; Pramodini, S.; Poornesh, P.; Rao, A.; Nagaraja, H.S.We present the studies on the influence of annealing on the third-order nonlinear optical properties of RF magnetron sputtered manganese doped zinc oxide (MZO) thin films with different doping concentration. It is revealed that the incorporation of Mn into ZnO and annealing lead to prominent changes in the third order nonlinearity. Nonlinear optical measurements were carried out by employing the z-scan technique using a continuous wave (CW) He-Ne laser of 633 nm. The z-scan results reveal that the films exhibit self-defocusing thermal nonlinearity. The third-order nonlinear optical susceptibility ?(3) was found to be of the order of 10-3 esu and 10-2 esu for annealed MZO thin films at 200 °C and 400 °C respectively. The dependence of grain size on the observed nonlinearity was revealed by atomic force microscopy analysis. Optical limiting studies were carried out for a range of input power levels and an optical limiting of about ?8 mW was observed indicating the possible application for photonic devices. © 2016 Elsevier B.V. All rights reserved.Item Band gap engineering of mixed Cd(1?x)Zn(x)Se thin films(Elsevier Ltd, 2017) Santhosh, T.C.M.; Bangera, K.V.; Shivakumar, G.K.This paper deals with band gap engineering in CdZnSe thin films. This was achieved by adding different amounts of zinc selenide (ZnSe) to cadmium selenide (CdSe). The weight percentage of ZnSe (x) was varied from 0 to 1 in steps of 0.2. The films were prepared using thermal evaporation technique. The structural analysis was carried out using X-ray diffraction. Surface morphology and elemental composition of the grown films was investigated using scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) respectively. As deposited cadmium selenide thin films were dark reddish in color, changes to lemon-yellow with increase in ZnSe concentration. Electrical transport studies have been carried out using two probe method. Resistivity of the mixed films increased with increase in ZnSe concentration and it shows semiconducting behavior. It is observed that activation energy for conduction increases from 0.39 eV to 0.85 eV with increase in ZnSe concentration. Optical properties of the films were analyzed from absorption and transmittance studies. It is observed that the optical band gap increases gradually from 1.67 eV to 2.60 eV as ‘x’ varied from 0 to 1. © 2017 Elsevier B.V.