Faculty Publications
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Item Effect of indium content on the characteristics of indium tin oxide thin films(Institute of Physics Publishing helen.craven@iop.org, 2018) Navya, K.; Bharath, S.P.; Bangera, K.V.; Shivakumar, G.K.Transparent IxT1-xO (x = 0 to 1) alloyed thin films were deposited by spray pyrolysis technique at a substrate temperature of 400 °C. The effect of incorporation of indium on structural, optical and electrical properties of tin oxide thin films were studied. Characterization of thin films was carried out using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDAX), UV-Visible absorption spectroscopy. XRD results revealed that IxT1-xO thin films were polycrystalline in nature with good crystallinity. Incorporation of indium effectively modifies the surface morphology of the films. The band gap was varied from 3.7 eV to 3 eV. Maximum electrical conductivity of 44.52 × 103 ?-1 m-1 and transmittance of 90% is obtained for I0.5T0.5O films, hence can be used as highly transparent and conducting electrodes. © 2018 IOP Publishing Ltd.Item Graphene-mediated band gap engineering of WO3 nanoparticle and a relook at Tauc equation for band gap evaluation(Springer Verlag service@springer.de, 2018) Baishya, K.; Ray, J.S.; Dutta, P.; Das, P.P.; Das, S.K.Engineering the band gap of semiconductors is often crucial in the quest for developing new and advanced technologies. In this report, the implication of graphene on the band gap optimization of tungsten trioxide (WO3) is discussed. Simple one-step sol–gel process was followed to anchor WO3 nanoparticles in graphene. Graphene induces a redshift in the band gap of WO3. Band gap narrowing of 6.60% is observed for 7 wt% graphene-tethered WO3. Interestingly, a profound difference is observed in estimating the band gap energy values following the usual Tauc equation. Our observation suggests that the differential form of Tauc equation is better suited to determine the band gap energy of inorganic semiconductors than the typical extrapolation method. © 2018, Springer-Verlag GmbH Germany, part of Springer Nature.Item A comprehensive study on the structural, morphological, compositional and optical properties of ZnxCd1-xS thin films(Institute of Physics Publishing helen.craven@iop.org, 2019) Barman, B.; Bangera, K.V.; Shivakumar, G.K.The absorption loss in cadmium sulfide (CdS) thin films which are widely used as a window layer in a photovoltaic cell limits the efficiency of the device. This issue can be addressed by ZnxCd1-xS thin films due to its tunable band gap nature. Herein, the various composition of ZnxCd1-xS (x=0, 0.15, 0.30, 0.45, 0.70, 0.85, 1) thin films were grown by a vacuum thermal evaporation technique and the characteristics of the films were investigated by varying the composition 'x'. The x-ray diffraction (XRD) studies displayed that the as-deposited films consist of diffraction peaks from both CdS and ZnS lattice. The formation of ternary ZnxCd1-xS films was verified when the deposited films were subjected to an annealing treatment. The morphology of the films was analyzed using a scanning electron microscope (SEM) and it was observed that the films are uniform, homogeneous and free from any pin-holes and cracks. The presence of Zn, Cd and S elements were quantized using an energy dispersive spectroscopy. Optical studies showed a successful non-linear band gap engineering (2.42-3.49 eV) for the deposited ZnxCd1-xS thin films. All films showed a very high optical transmittance of above 70% in the visible wavelength region. © 2020 IOP Publishing Ltd.