Effect of indium content on the characteristics of indium tin oxide thin films

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2018

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Institute of Physics Publishing helen.craven@iop.org

Abstract

Transparent I<inf>x</inf>T<inf>1-x</inf>O (x = 0 to 1) alloyed thin films were deposited by spray pyrolysis technique at a substrate temperature of 400 °C. The effect of incorporation of indium on structural, optical and electrical properties of tin oxide thin films were studied. Characterization of thin films was carried out using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDAX), UV-Visible absorption spectroscopy. XRD results revealed that I<inf>x</inf>T<inf>1-x</inf>O thin films were polycrystalline in nature with good crystallinity. Incorporation of indium effectively modifies the surface morphology of the films. The band gap was varied from 3.7 eV to 3 eV. Maximum electrical conductivity of 44.52 × 103 ?-1 m-1 and transmittance of 90% is obtained for I<inf>0.5</inf>T<inf>0.5</inf>O films, hence can be used as highly transparent and conducting electrodes. © 2018 IOP Publishing Ltd.

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Keywords

Absorption spectroscopy, Alloying, Conductive films, Crystallinity, Energy dispersive spectroscopy, Energy gap, Indium compounds, Morphology, Oxide films, Scanning electron microscopy, Spray pyrolysis, Surface morphology, Tin oxides, Transparent electrodes, X ray diffraction, Band gap engineering, Conducting electrodes, Electrical conductivity, Energy dispersive X ray spectroscopy, Indium tin oxide thin films, Optical and electrical properties, Spray-pyrolysis techniques, UV-visible absorption spectroscopy, Thin films

Citation

Materials Research Express, 2018, 5, 9, pp. -

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