Faculty Publications
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Item Effect of annealing on the structural and nonlinear optical properties of ZnO thin films under cw regime(2013) Nagaraja, K.K.; Pramodini, S.; Poornesh, P.; Nagaraja, H.S.We report on the studies of the effects of annealing on the structural and third-order nonlinear optical properties of ZnO thin films deposited on quartz substrates by the RF magnetron sputtering technique. The films were annealed in the temperature range 400-1000 °C. The third-order nonlinear optical studies were carried out using the z-scan technique under continuous wave (cw) He-Ne laser irradiation at 633 nm wavelength. The effects of annealing on the structural properties were examined using x-ray diffraction and atomic force microscopy (AFM). The (0 0 2) preferred orientation increased with increase in annealing temperature up to 800 °C. The crystalline phases of SiO2 were observed at higher annealing temperatures. The appearance of an extraneous phase was confirmed by AFM images and optical transmittance spectra. The samples exhibited nonlinear absorption and nonlinear refraction under the experimental conditions. The negative sign of the nonlinear refractive index n2 indicated that the films exhibit self-defocusing property due to thermal nonlinearity. The nonlinear refractive index n2, the nonlinear absorption coefficient ?eff and the third-order optical susceptibility ?(3) were found to be of the highest orders. The estimated value of third-order optical susceptibility ?(3) was of the order of 10-3 esu. Multiple diffraction rings were observed when the samples were exposed to the laser beam. The appearance of rings was due to the refractive index change and thermal lensing. With increase in laser intensity, the variations of the self-diffraction ring patterns were studied experimentally. The films also exhibited strong optical limiting properties under cw laser excitation, and reverse saturable absorption was the dominant process leading to the observed nonlinear behaviour. © 2013 IOP Publishing Ltd.Item Effect of annealing on the properties of Bi doped ZnO thin films grown by spray pyrolysis technique(Academic Press, 2014) Sadananda Kumar, N.; Bangera, K.V.; Shivakumar, G.K.The effect of annealing temperature on the structural, optical and electrical properties of transparent and conducting Bi doped ZnO (BZO) films deposited on glass substrate by spray pyrolysis technique was investigated. The BZO thin films were annealed in the temperature range from 450 °C to 550°C for 4 h in air atmosphere. The grain size of the BZO films increased with increasing annealing temperature. The annealed BZO films were electrically stable and there was a drastic change in the electrical conductivity after annealing. The films annealed at 500°C showed better conductivity and optical transmittance. © 2014 Elsevier Ltd. All rights reserved.Item Effect of annealing on the properties of spray-pyrolysed lead sulphide thin films for solar cell application(Springer Verlag service@springer.de, 2017) Veena, E.; Bangera, K.V.; Shivakumar, G.K.Annealing is the most important processing parameter perhaps as it directly affects the properties of the thin films. In the present article, lead sulphide thin films composed of (2 0 0) plane-oriented nano-rods were successfully synthesized on glass substrates using spray pyrolysis technique at annealing temperature 350 °C. Films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive analysis by X-ray (EDAX), UV–VIS–NIR spectrometry and two-probe experiments. The X-ray diffraction study confirmed that films exhibiting face-centred cubic structure with a preferred orientation along (2 0 0) plane were independent of annealing temperature. SEM photographs revealed the formation of nano-rods. The possible formation of nano-rods and its dependency on optical and electrical properties were discussed. Chemical composition in terms of atomic ratio of the constituents is determined from EDAX studies. The optical band gap of the lead sulphide thin films was found to decrease from 1.22 to 0.98 eV with an increase in annealing temperature. The electrical conductivity of the films at room temperature was of the order of 10?2 ??1 cm?1 with the low activation energy. Results prove that lead sulphide films grown by chemical method appeal its adoptability for potential solar cell applications. © 2017, Springer-Verlag Berlin Heidelberg.Item Influence of annealing temperature on the structural, morphological, mechanical and surface properties of near equiatomic NiTi thin films(Elsevier Ltd, 2017) Reddy, B.; Udayashankar, N.K.In this work, we report our studies on near equiatomic NiTi thin films grown on silicon (1 0 0) substrates deposited without intentional heating of the substrate by DC magnetron sputtering technique with separate elemental targets Ni and Ti. The films were annealed for one hour at various temperatures, i.e. 350, 450, 550 and 650 °C. X-ray diffraction (XRD) studies revealed that the degree of crystallinity increases up to 550 °C but decreases at 650 °C. The surface roughness value Rq, Ra and Rmax have been obtained by Atomic Force Microscopy (AFM). The hardness and elastic modulus values increase up to 550 °C and decreases at 650 °C. High Resolution X-ray Photoelectron Spectroscopy (HR-XPS) studies revealed that the annealed near equiatomic NiTi thin films have a strong tendency to form TiO2 (metal oxide) layer onto the film surface. This is due to the higher thermodynamic reactivity of Ti by leaving Ni-rich matrix trapped behind, most likely in the sub layers of NiTi along with Titanium carbide (Ti-C) and Silicon carbide (Si-C) precipitates. © 2017 Elsevier LtdItem Adsorption and photocatalytic properties of NiO nanoparticles synthesized via a thermal decomposition process(Cambridge University Press, 2018) Ramesh, M.; Rao, M.P.C.; Anandan, S.; Nagaraja, H.S.NiO nanoparticles (NPs) were synthesized at different annealing temperatures via a thermal decomposition process and characterized using X-ray diffraction, scanning electron microscopy, and UV-vis spectroscopy. The NiO NPs prepared at higher annealing temperature (400 °C) were shown excellent adsorption and photocatalytic activity toward textile dyes reactive black 5 (RB-5) and methylene blue (MB). About 87.2% of RB-5 in 60 min and 70.2% of MB in 5 h was removed using NiO NPs synthesized at 400 °C. The photocatalytic degradation of MB was found to increase with an increase in the annealing temperature of the catalyst. Moreover, the kinetic study revealed that the adsorption and photocatalytic activity of NiO NPs followed the second and first-order kinetics, respectively. The enhanced performance of NiO NPs toward dye removal might be related to its optical and structural properties. © Materials Research Society 2018.Item A balancing between super transparency and conductivity of solution combustion derived titanium doped indium oxide: Effect of charge carrier density and mobility(Elsevier B.V., 2018) Pujar, P.; Vardhan, R.V.; Gupta, D.; Mandal, S.In this contribution, super transparent (~100%) and conducting In14Ti1O23 (Titanium doped Indium oxide; InTiO) films were reported via solution combustion processing with acetylacetone as fuel. Both bulk-powder and thin film systems were studied and revealed the efficacy of low temperature combustion synthesis which yielded crystalline InTiO powder at 150 °C and its film counterpart had shown pronounced crystalinity with temperature. Also, all films with varying annealing temperature were smooth with rms value ranging from 0.29 nm to 1.9 nm. In addition, the charge carrier density in all films found to be of the order 1019 cm?3, possessing highest transparency nearly equals to uncoated glass at an annealing temperature of 350 °C having maximum of ~67% metal-oxygen-metal framework (or lattice oxygen) confirmed via X-ray photoelectron spectroscopy. Also, the highest conductivity of 20 S/cm at an annealing temperature of 450 °C clearly conveyed the potential of solution combustion processing in the fabrication of ultra-transparent InTiO films with no sophistication in the film fabrication. © 2018Item Effect of annealing-temperature-assisted phase evolution on conductivity of solution combustion processed calcium vanadium oxide films(Springer, 2018) Manjunath, G.; Vardhan, R.V.; Salian, A.; Jagannatha, R.; Kedia, M.; Mandal, S.In thiswork, the effect of annealing temperature on the conductivity of solution-combustion-synthesized calcium vanadium oxide (CVO) films was studied. Conductivity was tailored by the appearance of the phases like CaVO3, CaV2O5 and Ca2V2O7 as a function of annealing temperature; CaVO3 and CaV2O5 are responsible for high conductivity, whereas V5+ presence in Ca2V2O7 contributes towards dielectric nature. Evolution of phases of CVO was identified through X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. A detailed conductivity measurement as a function of annealing temperature helps us to identify the decreasing trend of conductivity with increasing temperature up to 400°C; beyond this it behaves like an insulator. There was a stable conductivity while aging the films in ambient for a few days. This study revealed safe application temperature domain of CVO, and a clear correlation of electrical conductivity with the in-depth structural-compositional-morphological study. © Indian Academy of Sciences.Item Investigation of sintering kinetics and morphological evolution of silver films from nano-dispersion(Springer Verlag service@springer.de, 2018) Pujar, P.; Anusha, P.; Gupta, D.; Mandal, S.The present study aimed at investigating the sintering kinetics and the mechanism of achieving uniform film morphology from silver nano-dispersion through evaporation of the solvent. A tuned time elapse between drop casting of silver dispersion and the annealing (dwell-time) acted as the decision maker in engineering the morphology: ring stain (infinite dwell-time), uniform deposit (variable dwell-time) and dot formation (zero dwell-time). Three distinct dwell-times (10, 20 and 30 min) are chosen for the study at different temperatures (120 to 250 °C) and the conclusion is derived based on the profile of the deposit. The frozen morphology that resulted from the evaporation goes through the debonding of surfactant with simultaneous sintering to minimize the surface energy. A linear isothermal sintering model comprising initial grain size, grain growth parameter, annealing time and fractional porosity helps to predict the grain size post-annealing. Theoretical predictions of grain sizes are well matched with experimental ones. The grain growth parameter which shows an upward trend with the annealing temperature is mainly due to a reduction in the porosity and the increase in the fraction of solid–solid interface which shows betterment in the percolation paths available for the movement of carriers. © 2018, Springer-Verlag GmbH Germany, part of Springer Nature.Item Facile in situ formation of high conductive Ag and Cu x O y composite films: a role of aqueous spray combustion(Springer New York LLC barbara.b.bertram@gsk.com, 2019) Salian, A.; Pujar, P.; Mandal, S.In the present contribution, in situ formation of low-temperature high conductive composite films composed of pure silver and oxides of copper (Cu x O y where, x = y = 1 for CuO and x = 2, y = 1 for Cu 2 O), are presented through spray combustion with a balanced stoichiometric redox reaction. High electrical conductivity (~ 7.8 × 10 5 S/cm) was retained in the composite film at an annealing temperature of 170 °C with matrix silver phase being 50% by volume. Whereas electrical conductivity of spray combustion processed pure silver is found to be ~ 2 × 10 6 S/cm. In situ formation of the composite film directly from the silver and cupric nitrate aqueous precursor solution through spray combustion proves it to be compositionally tunable with minimal usage of noble metal. Presence of Ag and Cu x O y is confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. The ratio of Cu 1+ /Cu 2+ in the composite is found to be 0.54 and 0.43 at an annealing temperature of 170 °C and 400 °C respectively. The transformation of Cu 2 O to CuO is highly a thermally activated phenomenon; as the vacancy driven electrical conductivity is more in Cu 2 O than CuO, stabilization of Cu 2 O at a lower temperature is desired. The composite electrode can have potential applications in optoelectronics, printed electronics and catalysis. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.Item Synthesis of single-phase stoichiometric InTe thin films for opto-electronic applications(Academic Press, 2019) Vallem, V.; Bangera, K.V.; G.k, S.Mono-phased and stoichiometric InTe thin films were successfully prepared using vacuum evaporation technique. A systematic variation in substrate temperature and annealing temperature along with annealing duration resulted stoichiometric and single phase InTe films. The annealing treatment of as-deposited films resulted in the structural transformation from mixed phase of In 2 Te 3 and InTe to mono-phased InTe. The electrical conductivity of stoichiometric single phase films was found to be 15.612 ? ?1 cm ?1 . The optical band gap of stoichiometric InTe films was found to be 1.42 eV and absorption coefficient of the films was of the order of 10 6 cm ?1 . Electrical properties of mono-phased films accompanied with optical properties such as direct band gap and absorption coefficient makes them suitable for optoelectronic devices. © 2019 Elsevier Ltd
