Faculty Publications
Permanent URI for this communityhttps://idr.nitk.ac.in/handle/123456789/18736
Publications by NITK Faculty
Browse
Search Results
Item Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.(Growth and characterization of semiconducting cadmium selenide thin films) Shreekanthan, K.N.; Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.2003Item Photoconductivity has been studied in cadmium selenide thin films prepared by thermal evaporation in vacuum. Attempts have been made to correlate the photoresponse with the deposition conditions. It has been observed that as-grown films, irrespective of the cadmium content, are not photosensitive and that baking in air, especially above 723 K, leads to considerable improvement in the photoconducting properties of cadmium selenide films.(Photoconductivity in vacuum deposited cadmium selenide thin films) Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.2004Item Structural, electrical and optical properties of stoichiometric In2Te3 thin films(Elsevier Ltd, 2017) Vallem, V.; Bangera, K.V.; Shivakumar, G.K.In2Te3 thin films were grown by thermal evaporation technique. The annealing of films played a major role to obtain stoichiometry, regardless of substrate temperature. Annealing at 300 ?C resulted in well oriented, mono-phased and nearly stoichiometric In2Te3 thin films. The variation in grain size of In2Te3 films associated with the substrate temperatures provides a significant control over the resistivity of the films, and the resistivity decreased with an increase in the grain size. The activation energy and optical band gap of stoichiometric In2Te3 films were found to be 0.01±0.005 eV and 0.99±0.02 eV, respectively. The absorption co-efficient of these films was found to be of the order of 105 cm?1. © 2016 Elsevier Ltd and Techna Group S.r.l.