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Structure and properties of vacuum deposited cadmium telluride thin films
(2006) Shreekanthan, K.N.; Bangera, K.V.; Shivakumar, G.K.; Mahesha, M.G.
Systematic and detailed study of the growth and properties of vacuum deposited cadmium telluride thin films was made. Both p- and n-type films were grown and these films were characterized for their structural, optical, and electrical properties. The crystallographic structure of the deposits was found to be dependent on the rate of deposition. Low deposition rates were observed to result in hexagonal deposits whereas high rates of deposition favoured cubic structure for the film. Electrical and optical properties were also found to be dependent on the deposition parameters.
Characterization of thin film Al/p-CdTe schottky diode
(2008) Mahesha, M.G.; Kasturi, V.B.; Shivakumar, G.K.
A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed. © TÜB?TAK.