Faculty Publications
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Item Optimized Mn and Bi co-doping in SnTe based thermoelectric material: A case of band engineering and density of states tuning(Chinese Society of Metals, 2021) Kihoi, S.K.; Kahiu, J.N.; Kim, H.; Shenoy, U.S.; Bhat, D.K.; Yi, S.; Lee, H.S.Tin telluride (SnTe) overwhelmingly continues to be studied owing to its promising thermoelectric properties, tunable electronic structure, and its potential as an alternate to toxic lead telluride (PbTe) based materials. In this research, we engineer the electronic properties of SnTe by co-doping Mn and Bi below their individual solubility limit. The First principles density functional theory studies reveal that both Bi and Mn introduce resonance states, thereby increasing the density of states near the Fermi level leading to enhanced Seebeck coefficient. This unique combination of using two resonant dopants to introduce flatter bands is effective in achieving higher performance at lower temperatures manifesting into a large Seebeck value of ?91 ?V/K at room temperature in the present case. Both elements optimally co-doped results in a very high power factor value of ?24.3 ?W/cmK2 at 773 K when compared to other high performance SnTe based materials. A zT of ?0.93 at 773 K is achieved by tuning the proportion of the co-dopants Mn and Bi in SnTe. The hardness value of pristine SnTe was also seen to increase after doping. As a result, synergistic optimized doping proves to be a suitable means for obtaining thermoelectric materials of superior characteristics without the need for heavy doping. © 2021Item Ultralow Lattice Thermal Conductivity and Enhanced Mechanical Properties of Cu and Sb Co-Doped SnTe Thermoelectric Material with a Complex Microstructure Evolution(American Chemical Society, 2022) Kihoi, S.K.; Shenoy, U.S.; Kahiu, J.N.; Kim, H.; Bhat, D.K.; Lee, H.S.SnTe is an exceptionally promising eco-friendly thermoelectric material that continues to draw immense interest as a source of alternative energy recovered from waste heat energy. Here, we investigate the effect of introducing Cu as a single doping element rather than phase separated in SnTe followed by Sb co-doping to tune the lattice thermal conductivity. A microstructure evolution was observed which influences the thermoelectric performance of these SnTe-based materials. An overall power factor of ∼22 μW/cmK2 and an ultralow lattice thermal conductivity of 0.39 W/mK are reported. A maximum ZT of 0.86 is also reported with an all-time record high hardness value of 165 Hv among SnTe-based thermoelectric materials. Through DFT calculations, we show that Cu opens the band gap of SnTe, whereas Sb in the presence of Cu introduces resonance levels and causes band convergence. This kind of enhanced thermoelectric performance is paramount for the application of SnTe in recovery of heat into useful electrical energy. © 2022 American Chemical SocietyItem Optimized electronic performance in half-Heusler Ti-doped NbFeSb materials by stoichiometric tuning at the Fe and Sb sites(Elsevier Ltd, 2022) Kahiu, J.N.; Shenoy, U.S.; Kihoi, S.K.; Kim, H.; Yi, S.; Bhat, D.K.; Lee, H.S.Electronic structure is known to be highly influenced by the site occupancy and the stoichiometry of the material which in turn largely effects the thermoelectric properties. Herein, we present electronic calculations using density functional theory (DFT) of non-stoichiometric Ti doped NbFeSb configuration, showing the effect of the anti-site Fe atoms on the electronic properties, and supporting them with experimental results of the prepared Nb0.8Ti0.2Fe1+xSb1−x samples. The electronic structure of the non-stoichiometric sample shows the introduction of two distinct peaks near the Fermi level by the Fe atoms at the Sb sites. These resonance states are known to cause an increase in the density of states effective mass near the Fermi level, which explains the increase in the Seebeck coefficient in the sample x = 0.03 compared to the sample x = 0.00. In addition, a comparatively higher electrical conductivity is reported from sample x = 0.03, which is attributed to the aliovalent substitution of Sb atoms by Fe atoms. The simultaneous increase in the Seebeck coefficient and electrical conductivity culminates in an increased power factor of ∼50.3 µW/cmK2 at 373 K, which is ∼46% higher than that of samples x = 0.00 and x = 0.05, highlighting the possibility of increasing the power density by stoichiometric variation to achieve the high joule-per-dollar performance of NbFeSb-based TE devices, the relevance of which is also currently emphasized in the quest for commercial viability. © 2021 Elsevier B.V.Item Pushing the limit of synergy in SnTe-based thermoelectric materials leading to an ultra-low lattice thermal conductivity and enhanced ZT(Royal Society of Chemistry, 2023) Kihoi, S.K.; Shenoy, U.S.; Kahiu, J.N.; Kim, H.; Bhat, D.K.; Lee, H.S.In the era of sustainable and environmentally friendly energy requirements, alternative sources of energy continue to be fervently sought after. Heat recovery into useful electrical energy from waste heat offers a readily available source of energy with humongous potential. Herein, a non-toxic thermoelectric material, SnTe, is explored. Promising thermoelectric performance is also communicated. Introducing Ge as a single dopant is shown for the first time in SnTe-based materials to introduce amorphous Ge (a-Ge) precipitates into the matrix. These act as an auxiliary contributor to the observed ultra-low lattice thermal conductivity of ∼0.33 W m−1 K−1 at 823 K, which is below the reported amorphous limit of SnTe. Bi, which is a known resonant dopant, was further co-doped to fine-tune the electrical properties where a high power factor of ∼25.7 μW cm−1 K−2 is reported. To push the limit of synergy, Sb was added raising the maximum figure of merit ZT to a value of ∼1.1 at 873 K. With co-doping, dual resonance levels are shown which distorts the density of states (DOS) contributing to an increased band effective mass. In conjunction with the introduction of an amorphous phase, co-doping is ascertained as a practical means for the synthesis of high-performance thermoelectric materials for effective waste-heat recovery applications. © 2023 The Royal Society of ChemistryItem Asymmetric Thermoelectric Performance Tuning in Low-Cost ZrFexNi1-xSb Double Half-Heusler Materials(American Chemical Society, 2023) Kahiu, J.N.; Kihoi, S.K.; Kim, H.; Shenoy, U.S.; Bhat, D.K.; Lee, H.S.The new paradigm for increasing the commercial viability of thermoelectric materials in the energy sector is the theoretical prediction and subsequent experimental validation and optimization of cheaper and inherently more efficient compositions. Herein, the experimental validation of the recently theoretically predicted ZrFe0.50Ni0.50Sb double half-Heusler and the ability to intrinsically tune this system to optimized p- or n-type materials by varying the Fe/Ni ratio in the synthesized ZrFexNi1-xSb (x = 0.35-0.65) samples are demonstrated. The samples are synthesized by arc melting, hot pressing, and annealing. Subsequent microstructural analysis confirms the crystallization of the ZrFexNi1-xSb into the half-Heusler structure and reveals that the variation of the Fe/Ni ratio favors the Ni-rich side. Consequently, the best p-type x = 0.55 and n-type x = 0.35 samples exhibit higher power factor values stemming from an increased carrier concentration, higher density of state effective mass, and suppressed bipolar conduction, as indicated by the Hall data analysis and density functional theory simulations. The additional lattice disorders introduced by varying the Fe/Ni ratio suppress the thermal conductivity and increase the microhardness of the n-type samples. The ZrFe0.35Ni0.65Sb and ZrFe0.55Ni0.45Sb samples achieve maximum zTs of ∼0.43 and 0.06, respectively, which is a great improvement over the ∼0.001 value of the ZrFe0.50Ni0.50Sb sample. These results highlight the viability of tuning the performance of double half-Heuslers on the doubly doped site. They will be instrumental in demonstrating the feasibility of developing low-cost double half-Heusler materials with better intrinsic and highly tunable properties. © 2023 American Chemical Society.Item Tailoring the Thermoelectric Performance of the Layered Topological Insulator SnSb2Te4 through Bi Positional Doping at the Sn and Sb Cation Sites(American Chemical Society, 2023) Kihoi, S.K.; Shenoy, U.S.; Kahiu, J.N.; Kim, H.; Bhat, D.K.; Lee, H.S.Ongoing research and development focus on emerging thermoelectric materials with enhanced performance, continually making the possibility of waste heat recovery a reality. In this work, we engineer the thermoelectric properties of the layered SnSb2Te4 topological insulators. To date, there is little research reporting on these materials as potential state-of-the-art thermoelectric materials. Thus, there is a need to formulate effective strategies to realize this potential. Since these materials are known to have intrinsically low lattice thermal conductivity, we shift our attention to improving the electrical transport properties. For the first time, positional Bi doping at both the Sn and Sb cation sites is adopted. The aliovalent and isovalent nature of Bi at these sites, respectively, is shown to cause significant improvements in the performance of these layered materials. The electronic band structure of the pure and doped samples, where we considered various occupancies, is studied whereby we reveal the occurrence of band convergence and resonant levels resulting in a high power factor of ∼10.8 μW cm-1 K-2 at 623 K. Overall, a high ZT of ∼0.46 at a relatively lower temperature of 673 K is recorded. The potential of these materials for thermoelectric applications is shown, especially in the case of Bi doping at the Sn cation site. Continued efforts to enhance the thermoelectric performance of these topological insulators are needed for them to gain a substantial competitive edge in comparison to other state-of-the-art thermoelectric materials. © 2023 American Chemical Society.