Tailoring the Thermoelectric Performance of the Layered Topological Insulator SnSb2Te4 through Bi Positional Doping at the Sn and Sb Cation Sites

Abstract

Ongoing research and development focus on emerging thermoelectric materials with enhanced performance, continually making the possibility of waste heat recovery a reality. In this work, we engineer the thermoelectric properties of the layered SnSb<inf>2</inf>Te<inf>4</inf> topological insulators. To date, there is little research reporting on these materials as potential state-of-the-art thermoelectric materials. Thus, there is a need to formulate effective strategies to realize this potential. Since these materials are known to have intrinsically low lattice thermal conductivity, we shift our attention to improving the electrical transport properties. For the first time, positional Bi doping at both the Sn and Sb cation sites is adopted. The aliovalent and isovalent nature of Bi at these sites, respectively, is shown to cause significant improvements in the performance of these layered materials. The electronic band structure of the pure and doped samples, where we considered various occupancies, is studied whereby we reveal the occurrence of band convergence and resonant levels resulting in a high power factor of ∼10.8 μW cm-1 K-2 at 623 K. Overall, a high ZT of ∼0.46 at a relatively lower temperature of 673 K is recorded. The potential of these materials for thermoelectric applications is shown, especially in the case of Bi doping at the Sn cation site. Continued efforts to enhance the thermoelectric performance of these topological insulators are needed for them to gain a substantial competitive edge in comparison to other state-of-the-art thermoelectric materials. © 2023 American Chemical Society.