Faculty Publications

Permanent URI for this communityhttps://idr.nitk.ac.in/handle/123456789/18736

Publications by NITK Faculty

Browse

Search Results

Now showing 1 - 2 of 2
  • Item
    Enhanced thermoelectric power of Al and Sb doped In 2 Te 3 thin films
    (Elsevier Ltd, 2019) Vallem, V.; Bangera, K.V.; G.k, S.
    Aluminium and antimony are used as dopants for In 2 Te 3 to study their influence on the thermoelectric power of the films. Both aluminium and antimony are expected to replace indium in the film and contribute to the structural, electrical and thermoelectric behaviour of indium telluride. It is observed that addition of both Al and Sb dopants induced an additional phase of free Te. The electrical conductivity of In 2 Te 3 films is observed to reduce with Al doping and increase with Sb doping when compared with the electrical conductivity of un-doped films. The thermoelectric power is found to be maximum for 2.1% Al doped and 1% Sb doped films. Moreover, the thermoelectric power factor of In 2 Te 3 films is found to be enhanced 3.1 times for 2.1% doping of Al and 8.7 times for 1% Sb doping. © 2019 Elsevier Ltd
  • Item
    Synthesis of single-phase stoichiometric InTe thin films for opto-electronic applications
    (Academic Press, 2019) Vallem, V.; Bangera, K.V.; G.k, S.
    Mono-phased and stoichiometric InTe thin films were successfully prepared using vacuum evaporation technique. A systematic variation in substrate temperature and annealing temperature along with annealing duration resulted stoichiometric and single phase InTe films. The annealing treatment of as-deposited films resulted in the structural transformation from mixed phase of In 2 Te 3 and InTe to mono-phased InTe. The electrical conductivity of stoichiometric single phase films was found to be 15.612 ? ?1 cm ?1 . The optical band gap of stoichiometric InTe films was found to be 1.42 eV and absorption coefficient of the films was of the order of 10 6 cm ?1 . Electrical properties of mono-phased films accompanied with optical properties such as direct band gap and absorption coefficient makes them suitable for optoelectronic devices. © 2019 Elsevier Ltd