Faculty Publications
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Item The effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited ZnTe thin films(2009) Rao, G.K.; Bangera, K.V.; Shivakumar, G.K.The present paper reports the effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited zinc telluride (ZnTe) thin films. X-ray diffraction (XRD) analysis of the films, deposited on glass substrates, revealed that they have cubic structure with strong (111) texture. Room temperature deposits are tellurium rich and an increase in the substrate temperature up to 553 °K results in stoichiometric films. Electrical conductivity has been observed to increase with the increase in substrate temperature, accompanied by increase in the carrier concentration and the mobility of the carriers. The optical bandgap energy and the thermal activation energy of the films have also been evaluated. © 2009 Elsevier Ltd. All rights reserved.Item Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide(Springer Nature, 2013) Palimar, S.; Bangera, K.V.; Shivakumar, G.K.The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 ?–1 cm–1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 ?–1 cm–1, whereas the conductivity of indium oxide-doped films is increased up to 3.5 × 103 ?–1 cm–1. Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping. © 2012, The Author(s).Item Effect of annealing on the properties of Bi doped ZnO thin films grown by spray pyrolysis technique(Academic Press, 2014) Sadananda Kumar, N.; Bangera, K.V.; Shivakumar, G.K.The effect of annealing temperature on the structural, optical and electrical properties of transparent and conducting Bi doped ZnO (BZO) films deposited on glass substrate by spray pyrolysis technique was investigated. The BZO thin films were annealed in the temperature range from 450 °C to 550°C for 4 h in air atmosphere. The grain size of the BZO films increased with increasing annealing temperature. The annealed BZO films were electrically stable and there was a drastic change in the electrical conductivity after annealing. The films annealed at 500°C showed better conductivity and optical transmittance. © 2014 Elsevier Ltd. All rights reserved.Item Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications(Elsevier Ltd, 2017) Santhosh, T.C.M.; Bangera, K.V.; G.k, S.CdSe and Bi (1%, 2%, 3%) doped CdSe thin films were deposited on the glass substrates using thermal evaporation technique. Effect of Bi doping on the structural, optical, electrical and photo response properties of CdSe thin films were investigated. The X-ray diffraction studies reveals that undoped and Bi doped CdSe films are polycrystalline in nature with hexagonal crystal structure along (002) direction. No significant changes are observed in the lattice parameters or the grain size indicating minimum lattice distortion. The optical band gap of undoped CdSe film was estimated to be 1.67 eV. Replacement of cadmium by bismuth results in an increase in the electrical conductivity of doped films. Doping with bismuth is found to improve the photo sensitivity of CdSe thin films. © 2017 Elsevier LtdItem Enhanced thermoelectric power of Al and Sb doped In 2 Te 3 thin films(Elsevier Ltd, 2019) Vallem, V.; Bangera, K.V.; G.k, S.Aluminium and antimony are used as dopants for In 2 Te 3 to study their influence on the thermoelectric power of the films. Both aluminium and antimony are expected to replace indium in the film and contribute to the structural, electrical and thermoelectric behaviour of indium telluride. It is observed that addition of both Al and Sb dopants induced an additional phase of free Te. The electrical conductivity of In 2 Te 3 films is observed to reduce with Al doping and increase with Sb doping when compared with the electrical conductivity of un-doped films. The thermoelectric power is found to be maximum for 2.1% Al doped and 1% Sb doped films. Moreover, the thermoelectric power factor of In 2 Te 3 films is found to be enhanced 3.1 times for 2.1% doping of Al and 8.7 times for 1% Sb doping. © 2019 Elsevier LtdItem Drastic increase in thermoelectric power factor of mixed Sb2Te3-In2Te3 thin films(Academic Press, 2019) Vallem, S.; Bangera, K.V.; G.k, S.Thermoelectric power factor is an indicator of the performance of a thermoelectric material. Attempts have been made by various techniques, like doping, to improve the thermoelectric conversion efficiency of materials. In the present study, a layer structured thermoelectric material Sb2Te3 is alloyed to In2Te3 using vacuum deposition method at 423 K to significantly enhance the power factor of ?118 ?Wm-1K?2 (at 450 K). Structurally, all films were polycrystalline in nature as clearly reflected in XRD patterns. All films were showing p-type conductivity, and electrical conductivity of In2Te3 films increased with increasing Sb2Te3 content. The seebeck coefficient is found to be higher for un-doped In2Te3 than that of Sb2Te3-In2Te3 and pure Sb2Te3 films. However, the thermoelectric power factor of 25% Sb2Te3 alloyed In2Te3 films is enhanced by 11.9 times that of In2Te3 films and 4 times that of Sb2Te3 films at 320 K. It is interesting to note that efficiency of the mixed films is higher than that of the individual films. © 2019 Elsevier Ltd