Faculty Publications
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Item The effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited ZnTe thin films(2009) Rao, G.K.; Bangera, K.V.; Shivakumar, G.K.The present paper reports the effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited zinc telluride (ZnTe) thin films. X-ray diffraction (XRD) analysis of the films, deposited on glass substrates, revealed that they have cubic structure with strong (111) texture. Room temperature deposits are tellurium rich and an increase in the substrate temperature up to 553 °K results in stoichiometric films. Electrical conductivity has been observed to increase with the increase in substrate temperature, accompanied by increase in the carrier concentration and the mobility of the carriers. The optical bandgap energy and the thermal activation energy of the films have also been evaluated. © 2009 Elsevier Ltd. All rights reserved.Item Studies on the photoconductivity of vacuum deposited ZnTe thin films(2010) Rao, K.G.; Bangera, K.V.; Shivakumar, G.K.The present paper reports the analysis of photoconductivity of vacuum deposited zinc telluride (ZnTe) thin films as a function of substrate temperature and post-deposition annealing. Detailed analyses were first carried out to understand the effect of substrate temperature and annealing on the structure, composition, optical and electrical properties of the films. The films deposited at elevated substrate temperatures showed faster and improved photoresponse. Post-deposition annealing was found to further enhance the photoresponse of the films. Attempts have been made to explain the improvement in the photoresponse on the basis of structural and compositional changes, taking place in the films, due to the substrate temperature and annealing. © 2010 Elsevier Ltd. All rights reserved.Item Magnetically induced electrodeposition of Zn-Ni alloy coatings and their corrosion behaviors(Elsevier B.V., 2013) Rao, V.R.; Bangera, K.V.; Hegde, A.C.The less magnetic features of Zn-Ni alloy compared to Fe-Ni and Fe-Co alloys made it interesting to develop them under the influence of applied magnetic field. In this regard, the effects of a magnetic field (B) applied in a direction parallel and perpendicular to the nominal current, during electrodeposition process of Zn-Ni alloy have been investigated by means of X-ray diffraction and EDX analysis. The modification of crystal orientation by superimposition of a varying magnetic field is studied for alloys of constant nickel content (8 a %.), deposited at optimal current density (j) of 3.0 A dm-2. The effect of magnetic field on crystallographic orientation and hence the corrosion behaviors of the coatings were studied. The preferential orientations (101) and (002) of the zinc phase and (330) ?-Ni 5Zn21 phase are always favored to exist with parallel and perpendicular magnetic field. The preferential (321) ?-Ni 5Zn21 orientation is found to be the characteristic of perpendicular magnetic field. Further, Zn (100) orientation is found to be non-responsive to the effect of parallel magnetic field. The coatings developed using perpendicular magnetic field is more corrosion resistant compare to that for parallel magnetic field. This is attributed to the additional (321) ?-Ni5Zn21 orientations. The changes in the phase structure of the coatings deposited at different magnetic field are attributed to the effect caused by the magnetic convection induced in the electrolytic solution, called MHD effect (magneto-hydrodynamic effect). The chemical composition of the alloy was found to be same in both natural and magnetically induced deposition due to constant Ni content in the bath. The variation in the surface morphology of the coatings was studied by scanning electron microscopy (SEM). The Zn-Ni alloy coating deposited at 0.8 T perpendicular B showed the highest corrosion resistance (with corrosion rate=0.26 × 10-2 mm y-1) compared to the one with no B (corrosion rate = 14.46 × 10-2 mm y-1). The improved corrosion resistance of the coatings was discussed in the light of magnetic field effect on crystallographic orientation. © 2013 Elsevier B.V. All rights reserved.Item Effect of substrate temperature and film thickness on the thermoelectric properties of In2Te3 thin films(Elsevier Ltd, 2017) Vallem, V.; Bangera, K.V.; Shivakumar, G.K.Herein, the thermoelectric properties of vacuum deposited In2Te3 thin films were investigated by varying the substrate temperature and the thickness of the films. The thermo-electro motive force of the prepared films was found to increase with an increase in the substrate temperature up to 423 K and then decrease at 473 K due to the presence of mixed-phase structure. The maximum thermoelectric power of 220 ?V/K was observed for the films deposited at 423 K substrate temperature, which was found to decrease with increase in thickness. The films deposited at 423 K with 150 nm thickness showed maximum power factor of 27 ?Wm?1K?2 at 450 K. These observations are explained on the basis of structural, morphological and compositional changes. © 2017 Elsevier B.V.Item Effective role of thickness on structural, electrical and optical properties of lead sulphide thin films for photovoltaic applications(Elsevier Ltd, 2017) Veena, E.; Bangera, K.V.; Shivakumar, G.K.The n-type lead sulphide thin films were deposited at 350 °C substrate temperature on glass substrates using advanced spray pyrolysis technique. The thickness of the thin films played an important role to improve the properties of lead sulphide and to use in device fabrication apart from various deposition parameters. The films deposited at thickness of 520 nm resulted in a well oriented polycrystalline with face-centered cubic structure. An enhancement in the crystallite size with increase in film thickness was evidenced by XRD and SEM. The variation in crystallite size of films associated with different thickness provides a significant control over optical and electrical properties. The resistivity of the thin films decreased with an increase in thickness was of the order of 102 ? cm. The activation energy and optical band gap of the films deposited at optimized condition were found to be 0.20 eV and 1.22 eV, respectively. The absorption coefficient of the films was found to be 106 cm?1. Results prove that the lead sulphide films synthesized using spray technique appeal its adaptability for potential photovoltaic applications in solar cells. © 2017Item Effect of substrate temperature on the suitability of thermally deposited cadmium sulfide thin films as window layer in photovoltaic cells(Academic Press, 2018) Barman, B.; Bangera, K.V.; Shivakumar, G.K.Cadmium sulfide has been studied as an important material in solar energy research because of its energy band gap and attractive electrical characteristics. While thin films of cadmium sulfide have been found to be useful as window layer in a solar cell, the role of various deposition parameters is yet to be understood. In the current study, the role of substrate temperature on the characteristics of the CdS thin films is analyzed. Thin films of cadmium sulfide (?450 nm thick) were deposited at various substrate temperatures viz., 300 K, 323 K, 373 K, and 423 K onto clean glass substrates by vacuum thermal evaporation method. The structural, morphological, and opto-electrical properties of the deposited films were studied as a function of substrate temperature. X-ray diffraction (XRD) study revealed that the thin films are polycrystalline in nature and having a hexagonal wurtzite crystal structure along (002) plane. Scanning electron microscopy (SEM) along with energy dispersive spectroscopy (EDS) revealed that the grown films are homogeneous, uniform and pin-hole free. All the films deposited at various substrate temperature displayed high optical transmittance (>60%) in the visible range. The optical energy band gap of the films was estimated using Tauc's plot and was found to increase by a slight margin with an increase in the substrate temperature and decrease at higher substrate temperature. The photosensitivity was found to be highest for the CdS thin film grown at a substrate temperature of 373 K. © 2018 Elsevier LtdItem Enhanced gas sensing properties of indium doped ZnO thin films(Academic Press, 2018) Bharath, S.P.; Bangera, K.V.; Shivakumar, G.K.Indium doped ZnO (InxZn1-xO, 0 ? x ? 0.05) thin films were deposited on to soda lime glass substrate by employing spray pyrolysis as deposition technique. Effect of doping concentration on characteristics of thin films were examined by XRD, SEM, UV-Visible spectroscopy, electrical and gas sensing measurements. XRD analysis demonstrates polycrystalline nature of thin films and also shows the shift in orientation from (002) to (101) crystal plane with increase in indium doping concentration. Surface morphological analysis shows the formation of homogeneous particle like nanostructures. Optical transmittance determined from UV-Visible spectroscopy was in the range of 80–95%, which was decreasing with increase in indium doping concentration. Maximum electrical conductivity was achieved at an optimal indium doping concentration of 3 at.%. The gas sensing properties were examined for different concentration of volatile organic compounds like acetone, ethanol and methanol for different doping levels. In0.03Zn0.97O thin films showed good sensitivity towards ethanol, with sensitivity of 30% towards 25 ppm of ethanol. © 2018 Elsevier Ltd