Faculty Publications
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Item Characterization of p-CdTe/n-CdS hetero-junctions(2009) Mahesha, M.G.; Bangera, K.V.; Shivakumar, G.K.Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.Item Preparation and characterization of CdxZn1-xS thin films by spray pyrolysis technique for photovoltaic applications(2009) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. In the entire compositions, the (0 0 2) diffraction peak is prominent which gives lattice matching to the chalcogenide semiconductor such as CuInxGa1-xSe2 and CuIn (s1-xSex)2, which are used in photovoltaic devices. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0 to 1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. © 2009 Elsevier Ltd. All rights reserved.Item Growth, structural and optical properties of CdxZn1-xS thin films deposited using spray pyrolysis technique(2010) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0-1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. © 2009 Elsevier B.V. All rights reserved.Item Properties of CdxZn1-xO thin films and their enhanced gas sensing performance(Elsevier Ltd, 2017) Bharath, S.P.; Bangera, K.V.; Shivakumar, G.K.CdxZn1-xO(0 ? x ? 0.20) thin films with different Cd concentrations were successfully deposited on glass substrate using spray pyrolysis technique. X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDAX) were used for structural, surface morphological and compositional characterization. The XRD analysis revealed that the synthesized films were hexagonal in structure with (002) orientation. The SEM studies confirm the formation of homogeneous and uniform films. Optical transmittance and electrical conductivity of the films were evaluated using UV–Visible spectroscopy and two probe method respectively. The optical studies showed that the CdxZn1-xO thin films have optical transmittance in entire visible region. The resistivity of undoped films were very high and it decreases with addition of cadmium. The gas sensing properties were investigated at optimal temperature of 350 °C for various volatile organic compounds like acetone, ethanol and methanol. The CdxZn1-xO thin films with 10 at. % cadmium concentration showed the sensitivity of 50% for 1 ppm ethanol. © 2017 Elsevier B.V.Item Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications(Elsevier Ltd, 2017) Santhosh, T.C.M.; Bangera, K.V.; G.k, S.CdSe and Bi (1%, 2%, 3%) doped CdSe thin films were deposited on the glass substrates using thermal evaporation technique. Effect of Bi doping on the structural, optical, electrical and photo response properties of CdSe thin films were investigated. The X-ray diffraction studies reveals that undoped and Bi doped CdSe films are polycrystalline in nature with hexagonal crystal structure along (002) direction. No significant changes are observed in the lattice parameters or the grain size indicating minimum lattice distortion. The optical band gap of undoped CdSe film was estimated to be 1.67 eV. Replacement of cadmium by bismuth results in an increase in the electrical conductivity of doped films. Doping with bismuth is found to improve the photo sensitivity of CdSe thin films. © 2017 Elsevier LtdItem Effect of cadmium incorporation on the properties of zinc oxide thin films(Springer Nature, 2018) Bharath, S.P.; Bangera, K.V.; Shivakumar, G.K.CdxZn1-xO (0 ? x ? 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, CdxZn1-xO thin films are subjected to annealing. Both the as-deposited and annealed CdxZn1-xO thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed CdxZn1-xO thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed CdxZn1-xO thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV-Vis spectroscopy shows red shift in the band gap for CdxZn1-xO thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films. © Springer-Verlag GmbH Germany, part of Springer Nature 2018.