Faculty Publications
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Item Effect of annealing on the properties of Bi doped ZnO thin films grown by spray pyrolysis technique(Academic Press, 2014) Sadananda Kumar, N.; Bangera, K.V.; Shivakumar, G.K.The effect of annealing temperature on the structural, optical and electrical properties of transparent and conducting Bi doped ZnO (BZO) films deposited on glass substrate by spray pyrolysis technique was investigated. The BZO thin films were annealed in the temperature range from 450 °C to 550°C for 4 h in air atmosphere. The grain size of the BZO films increased with increasing annealing temperature. The annealed BZO films were electrically stable and there was a drastic change in the electrical conductivity after annealing. The films annealed at 500°C showed better conductivity and optical transmittance. © 2014 Elsevier Ltd. All rights reserved.Item Effect of annealing on the properties of spray-pyrolysed lead sulphide thin films for solar cell application(Springer Verlag service@springer.de, 2017) Veena, E.; Bangera, K.V.; Shivakumar, G.K.Annealing is the most important processing parameter perhaps as it directly affects the properties of the thin films. In the present article, lead sulphide thin films composed of (2 0 0) plane-oriented nano-rods were successfully synthesized on glass substrates using spray pyrolysis technique at annealing temperature 350 °C. Films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive analysis by X-ray (EDAX), UV–VIS–NIR spectrometry and two-probe experiments. The X-ray diffraction study confirmed that films exhibiting face-centred cubic structure with a preferred orientation along (2 0 0) plane were independent of annealing temperature. SEM photographs revealed the formation of nano-rods. The possible formation of nano-rods and its dependency on optical and electrical properties were discussed. Chemical composition in terms of atomic ratio of the constituents is determined from EDAX studies. The optical band gap of the lead sulphide thin films was found to decrease from 1.22 to 0.98 eV with an increase in annealing temperature. The electrical conductivity of the films at room temperature was of the order of 10?2 ??1 cm?1 with the low activation energy. Results prove that lead sulphide films grown by chemical method appeal its adoptability for potential solar cell applications. © 2017, Springer-Verlag Berlin Heidelberg.Item Synthesis of single-phase stoichiometric InTe thin films for opto-electronic applications(Academic Press, 2019) Vallem, V.; Bangera, K.V.; G.k, S.Mono-phased and stoichiometric InTe thin films were successfully prepared using vacuum evaporation technique. A systematic variation in substrate temperature and annealing temperature along with annealing duration resulted stoichiometric and single phase InTe films. The annealing treatment of as-deposited films resulted in the structural transformation from mixed phase of In 2 Te 3 and InTe to mono-phased InTe. The electrical conductivity of stoichiometric single phase films was found to be 15.612 ? ?1 cm ?1 . The optical band gap of stoichiometric InTe films was found to be 1.42 eV and absorption coefficient of the films was of the order of 10 6 cm ?1 . Electrical properties of mono-phased films accompanied with optical properties such as direct band gap and absorption coefficient makes them suitable for optoelectronic devices. © 2019 Elsevier Ltd