Conference Papers
Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/28506
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Item Characterization of ZnO films produced by thermal evaporation and oxidation(Trans Tech Publications Ltd ttp@transtec.ch, 2015) Prabukumar, C.; Jayalakshmi, M.; Bhat, K.ZnO nanostructures such as nanowires and nanorods are beneficial in solar energy harvesting because they provide a structure with a large surface area. Also, they provide a direct pathway to electron transportation, eliminating the scope for grain boundary scattering. In this investigation, thin ZnO films were prepared by thermal evaporation of the Zn metal, which was followed by oxidation. Evaporation parameters and oxidation temperatures were fixed. The oxidation duration was the variable. The effect of oxidation time, on the morphology and structural properties were studied by using scanning electron microscopy and X-ray diffractometry. The study shows that with increase in oxidation time, the morphology changed to nanorods from initial flake morphology. As a function of oxidation time, the crystallinity and texture became more dominant. By using, I-V characteristic curves, it was found that the morphology changes alter the surface electrical conductivity of the prepared ZnO films. © (2015) Trans Tech Publications, Switzerland.Item Preparation of vacuum deposited cadmium selenide thin films for optoelectronic applications(Elsevier Ltd, 2016) Santhosh, T.C.M.; Bangera, K.V.; Shivakumar, G.K.Cadmium selenide is a direct band gap material which finds applications in optoelectronic devices. Preparation of the compound semiconductor in thin film form with stable electrical characterization has been investigated in the present study. As deposited films at room temperature (25°C) are non-stoichiometric with excess cadmium and films grown at 180°C substrate temperature are stoichiometric and homogeneous. The crystallinity increases with increase in substrate temperature. The optical band gap determined from absorption measurements lie in the range 1.89 eV - 2.02 eV. Electrical conductivity measurements made in a temperature range from 25°C to 200°C yield thermal activation energy of 0.52eV for stoichiometric films. Films deposited at 180° C and annealed at 200° C for two hours are found to be stabilized in its electrical and structural properties. © 2016 Elsevier Ltd.Item Synthesis and characterization of Cu doped CdTe thin films for solar cell application(Elsevier Ltd, 2019) Ray, S.; Bangera, K.V.; Tarafder, K.Synthesis and characterization of thin-film based photovoltaic materials attract with great research interest for the past few years as the efficiency of the photovoltaic cell can be improved systematically with a proper functionalization of the films and making multilayers. We have synthesized Cu-doped CdTe thin films with different doping concentrations using the PVD technique. The structural, morphological, and optical properties of synthesized films were carefully investigated. Our study shows that all the prepared films are polycrystalline with a cubic structure. The morphological studies (SEM) reveal that all the films are crack and pinhole-free. The composition and stoichiometry of the film were confirmed by energy dispersive spectroscopy (EDS) study. The optical characterization of the samples is performed by using UV- VIS-NIR spectrometer. The result shows interesting optical behavior of the film suitable for solar cell applications. © 2019 Elsevier Ltd. All rights reserved.
