Conference Papers

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    A novel dual-gate nano-scale InGaAs transistor with modified substrate geometry
    (Institute of Electrical and Electronics Engineers Inc., 2017) Sharma, B.S.; Bhat, M.S.
    Structures based on Indium Gallium Arsenide (InGaAs) have attracted a lot of interest in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) technology recently. In this paper, a new nano-scale dual-gate MOSFET using In0.75 Ga0.25As is proposed. Multiple designs were simulated with different doping concentration in the source/drain region and the channel stop region to get an excellent Ion/Ioff. Since current in Metal-Oxide-Semiconductor (MOS) depends on the doping profile of the channel, a careful re-engineering of the channel would improve the MOSFET characteristics. Channel length, Lg of the proposed device is 20 nm which produces a significant amplification and supports large current due to wide channel interaction. Simulation of In0.75 Ga0.25 As MOSFET with Lg = 20 nm, gate-oxide thickness toxGate1 = toxGate2 = 2nm and a width Z = 1000nm, exhibits transconductance gm-max ≈ 293.626 μS/μm, subthreshold slope SS ≈ 70 mV/decade and drain-induced-barrier-lowering DIBL = 41.66 mV/V. © 2017 IEEE.
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    Design and Analysis of Single SiC MOSFET Switch Flyback Converter based Control Power Supply for Renewable Applications
    (Institute of Electrical and Electronics Engineers Inc., 2020) Jagannath, S.; Agarwal, N.; Balasubramaniasarma, S.; Ma, K.W.; Balasubramanian, B.
    This paper presents the use of a 1700 V silicon carbide (SiC) MOSFET in a single switch configuration for a high input voltage control power supply (CPS) design in a flyback topology. Such a CPS is used to power the control and monitoring systems employed in renewable power generation, general purpose drives and uninterrupted power supply (UPS). Renewable applications often see DC bus voltages up to 1000 V. Hence, flyback topology is chosen as it provides an efficient DC voltage step-down for a wide input voltage range with low voltage ripple and desirable regulation. The performance of the flyback converter using a CoolSiCTM MOSFET is observed through appropriate simulations and verified through the hardware prototype. Further, the switching and conduction losses of the MOSFET along with system performance parameters are calculated and the results are presented in this paper. © 2020 IEEE.
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    Lattice Heating Effects on Electric Field and Potential for a Silicon on Insulator (SOI) MOSFET for MIMO Applications
    (Institute of Electrical and Electronics Engineers Inc., 2023) Kumar, P.K.; Srikanth, K.; Boddukuri, N.K.; Suresh, N.; Vani, B.V.
    Finding substitutes for Silicon dioxide materials is necessary when technology is scaled back. TheSOI device conceals the self heating effects induced in the MOSFET. There exists an active path of conduction from the drain to substrate and source to substrate in the entire device to curb the heating effects. The buried oxide layer used in the device is SiO2 and it is essentially free from the issues related to fabrication and performance. The comparison is made from the bulk MOSFET and SOI MOSFET from the literature. The Silicon (Si) and Silicon Germanium (SiGe) materials are considered for the analysis. The lattice temperature effects are induced for the comparative analysis of the proposed SOI MOSFET. The main parameters of interest in the study are the electric field (lateral and vertical) and potential across the channel. © 2023 IEEE.
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    Enhanced pH Sensitivity of ISFET via TiO2 Gate Doping: A Novel Approach
    (Institute of Electrical and Electronics Engineers Inc., 2025) Herur, S.M.; Sharath Balaji, T.; Singh, M.
    This paper presents the simulation and analysis of an Ion-Sensitive Field-Effect Transistor (ISFET)-based pH sensor designed for accurate detection of ion concentrations through variations in gate voltage. The ISFET structure replaces the conventional gate of a MOSFET with an electrolyte and titanium dioxide (TiO2) doping, enabling the sensing of pH levels via ion-gate dielectric interactions. In this study, potassium chloride (KCl) is used as the electrolyte, and its influence on the ISFET's electrical behavior is systematically analyzed. The output characteristics, including the drain current (Id) versus drain-source voltage (Vds) under varying gate-source voltages (Vgs), are obtained using COMSOL simulation. The semiconductor and electrolyte models are meticulously coupled to ensure a realistic representation, capturing the ion-sensitive interface's behavior. A simplified global equation technique is employed to derive critical operating parameters efficiently, without explicitly modeling the feedback circuitry. The ISFET's performance is further evaluated by analyzing its sensitivity to pH variations and extracting relevant electrical characteristics for optimization. This work provides a comprehensive approach to simulating ISFET-based pH sensors, highlighting its potential for efficient and precise pH measurement in biochemical and industrial applications. © 2025 IEEE.