Conference Papers

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    0.5 V, low power, 1 MHz low pass filter in 0.18 μm CMOS process
    (2012) Vasantha, M.H.; Laxminidhi, T.
    In this paper a low power continuous-time 4th order low pass Butterworth filter operating at power supply of 0.5 V is presented. A 3-dB bandwidth of 1 MHz using technology node of 0.18 μm is achieved. In order to achievenecessary head-room, the filter uses pseudo-differential bulk-driven transconductor. A master-slave based common modefeedback(CMFB) circuit sets the output common mode voltageof transconductor. The simulation results show that the filter has a dynamic range of 54 dB and consumes a total power of 36 μW when operating at a supply voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ, lowest among similar low-voltage filters found in the literature. The simulation result show that the 3-dB bandwidth variation for process, voltage and temperature is less than ±10%. © 2012 IEEE.
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    Low voltage, low power transconductor for low frequency Gm-C filters
    (Springer Verlag service@springer.de, 2017) Hanumantha Rao, G.; Rekha, S.
    A low voltage, low power bulk-driven transconductor for low frequency Transconductance-C (Gm - C) filters filters is proposed. The transconductor is designed in UMC 180nm technology with supply voltage of 0.5V. The transconductance (Gm) is tunable from 12nS to 100nS, which is suitable for low frequency Gm - C filters. The power consumption is 120 nW. As an application, a 2nd order Butterworth low pass filter (LPF) with cutoff frequency tunable from 110Hz to 960Hz is designed. © Springer Nature Singapore Pte Ltd 2017.