Conference Papers
Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/28506
Browse
2 results
Search Results
Item Effect of substrate temperature on the structural and electrical properties of spray deposited lead sulfide thin films(Elsevier Ltd, 2016) Veena, E.; Bangera, K.V.; Shivakumar, G.K.Lead sulfide (PbS) thin films were prepared by chemical spray pyrolysis method using lead acetate and thiourea as precursors of Pb+2 and S-2 ions. X-ray diffraction (XRD) technique, scanning electron microscope (SEM) and EDAX analysis were used for structural, morphological and compositional characterization. XRD analysis shows that the films are cubic in nature with a preferred orientation along (2 0 0). EDAX analysis shows that films deposited at 150°C are sulfur rich. An increase in the substrate temperature results in a decrease in the sulfur content of the prepared film. It has been observed that thin films deposited at or above 225°C are smooth & uniform morphologically. Beyond a substrate temperature of 275°C, the films become discontinuous and non-uniform. However, the films are sulfur rich, even at 275°C. Electrical conductivity of prepared thin films have been measured using silver contacts in coplanar geometry. Films are n - type as confirmed by hot probe technique. The electrical conductivity at room temperature (25°C) was in the order of 10-4 Ω-1cm-1 and was found to increase with increase in temperature showing the semiconducting nature of the films with the band gap of 0.39 eV. © 2016 Elsevier Ltd.Item Influence of zinc precursor concentration on properties zinc sulphide thin films using spray pyrolysis technique(American Institute of Physics Inc. subs@aip.org, 2017) Veena, E.; Bangera, K.V.; Shivakumar, G.K.Stoichiometric high transparent n-zinc sulphide thin films were prepared using chemical spray pyrolysis technique. The concentration of the cationic precursor played a major role to obtain stoichiometry, regardless of various deposition parameters. Zinc sulphide films deposited at 450?C for the ratio 0.33:1 (Zn:S) resulted in well oriented, stoichiometric polycrystalline cubic structure. The variation in crystallite size associated with the cationic precursor concentration provides significant control over the structural, optical and electrical properties of the films. The optical band gap and activation energy of stoichiometric ZnS films were found to be 3.54 ± 0.02eV and 0.82 ± 0.05eV, respectively. The absorption coefficient of the films was found to be 102 cm-1. © 2017 Author(s).