Conference Papers

Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/28506

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Author: search.filters.author.Rekha, S.Subject: search.filters.subject.Transconductor

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    Ultra low power active-RC filter in 180 nm CMOS technology
    (2013) Rekha, S.; Laxminidhi, T.
    This paper presents the design of a low voltage, ultra low power fifth order Chebyshev low pass filter operating at a power supply voltage of 0.5 V in 180 nm CMOS technology. A CMOS inverter based transconductor is used as the building block. A sub-threshold model is developed for the transconductor as the transistors are operating in sub-threshold region. A feedforward compensated OTA is designed using this transconductor and is used to realize the filter. Designed filter has a cutoff frequency of 150 kHz and offers a dynamic range of 54.16 dB with a figure of merit of 0.02 fJ. Power consumed by the filter is 21.79 microwatt. © 2013 IEEE.
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    Ultra low voltage, low power active-RC filter in 90 nm CMOS technology
    (Institute of Electrical and Electronics Engineers Inc., 2019) Yeshwanth, Y.P.; Prasad, T.P.V.; Mudadla, V.; Pavan; Rekha, S.
    In this work, an ultra low voltage, second order low pass active-RC filter is designed in 90 nm CMOS process. A bulk-driven transconductor and a feed-forward compensated operational transconductance amplifier (OTA) are used as building blocks of the filter. Operating with a supply voltage of 0.5 V, filter exhibits a low pass Butterworth response with a cutoff frequency of 1 MHz. A mathematical model of the filter is developed using descriptor state-space equations for optimizing the filter response. The designed filter consumes a power as less as 91.99 μW with a figure of merit (FoM) of 3.39 fJ/pole. © 2019 IEEE.