Conference Papers

Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/28506

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Author: search.filters.author.Rao, R.Subject: search.filters.subject.Drain Induced Barrier Lowering (DIBL)

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    Investigations on the Effect of Spacer Dielectrics on the DC Characteristics of Dual Material Gate Junctionless FinFETs
    (Institute of Electrical and Electronics Engineers Inc., 2020) Mathew, S.; Nithin, N.; Rao, R.
    This work analyses the influence of dielectric constant of spacer on the electrical characteristics as well as on two vital short channel effect parameters i.e DIBL and Subthreshold Swing of Dual Material Gate Junctionless FinFET (DMG-JLFinFET). Various spacer materials each with different dielectric constant, were used for 3D TCAD simulations. It was observed that high κ spacers gave higher value of ON current. Increase in leakage current was also observed for high κ spacers at higher negative gate bias. Subthreshold Swing (SS) as well as Drain Induced Barrier Lowering (DIBL) had reduced extensively with the increase in dielectric constant of spacer. © 2020 IEEE.
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    Investigations on the effect of Dual Material Gate work function on DIBL and Subthreshold Swing in Junctionless FinFETs
    (Institute of Electrical and Electronics Engineers Inc., 2020) Mathew, S.; Nithin; Bhat, K.N.; Rao, R.
    This paper investigates the influence of gate material work function on the electrical characteristics as well as short channel effects exhibited by Dual Material Gate-Junctionless FinFETs (DMG-JLFinFETs) with channel length as low as 10 nm. 3D TCAD simulations performed on these devices show that various device parameters like threshold voltage, ON-current, etc, are influenced by the work function difference between the control gate and screen gate material of DMG-JLFinFET. DMG-JLFinFETs exhibit very low Drain Induced Barrier Lowering (DIBL), far lesser than its Single Material Gate (SMG) counterpart. Subthreshold Swing (SS) of DMG devices is higher than SMG devices. The optimal ratio of control gate length to total gate length in DMG-JLFinFET is found to be between 0.5 and 1 for better suppression of short channel effects. © 2020 IEEE.