Conference Papers

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    0.5 V, 36μW Gm-C butterworth low pass filter in 0.18μm CMOS process
    (2012) Vasantha, M.H.; Laxminidhi, T.
    This paper presents a low voltage, low power continuous-time (G m-C) 4th order low pass Butterworth filter with a 3-dB bandwidth of 1MHz and capable of operating at supply voltage as low as 0.5V in 0.18 μm. The filter uses bulk-driven technique for achieving the necessary head-room. The simulation results show that the filter has a peak-to-peak signal swing of 1.2V (differential) for 1% THD and a dynamic range of 54 dB. The power consumed by the filter is 36μW when operating at a voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ and is found to be lowest among the similar filters found in the literature. © 2012 IEEE.
  • Item
    0.5 V, low power, 1 MHz low pass filter in 0.18 μm CMOS process
    (2012) Vasantha, M.H.; Laxminidhi, T.
    In this paper a low power continuous-time 4th order low pass Butterworth filter operating at power supply of 0.5 V is presented. A 3-dB bandwidth of 1 MHz using technology node of 0.18 μm is achieved. In order to achievenecessary head-room, the filter uses pseudo-differential bulk-driven transconductor. A master-slave based common modefeedback(CMFB) circuit sets the output common mode voltageof transconductor. The simulation results show that the filter has a dynamic range of 54 dB and consumes a total power of 36 μW when operating at a supply voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ, lowest among similar low-voltage filters found in the literature. The simulation result show that the 3-dB bandwidth variation for process, voltage and temperature is less than ±10%. © 2012 IEEE.