Conference Papers

Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/28506

Browse

Search Results

Now showing 1 - 2 of 2
  • Item
    Studies on Resistive Switching of Cu/Ta2O5/Pt Devices for Non-volatile Memory Application
    (Springer, 2021) Thathron, T.; Sahu, V.K.; Ajimsha, R.S.; Das, A.K.; Misra, P.
    In recent times, memory devices based on resistive switching (RS) phenomena in dielectric materials have become a strong contender for the futuristic universal memory. Among other materials being explored for RS application, tantalum pentaoxide (Ta2O5) has emerged as potential candidate due to its large dielectric constant and compatibility with the existing complementary metal-oxide semiconductor process. In view of this, we have studied the resistive switching memory characteristics of Ta2O5 thin film in Cu/Ta2O5/Pt device configuration. About 200 nm thick films of Ta2O5were deposited on platinum-coated silicon (Pt/Si) substrate by Pulsed Laser Deposition (PLD) method. On the top of Ta2O5 thin film, Cu electrodes of radius ~100 µm and thickness ~ 100nm were grown by RF magnetron sputtering using shadow masking. The RS behaviour of Cu/Ta2O5/Pt devices was studied by current–voltage (I-V) measurements at room temperature. The as-fabricated Cu/Ta2O5/Pt devices showed repeatable and reliable, non-volatile bipolar resistance switching for 100 cycles, indicating good endurance. Due to virgin low resistance state of the device, the initial electroforming step was not required for bipolar RS. The mean resistance of high resistance state (HRS) and low resistance state (LRS) was ~300 MΩ and 500 Ω respectively with very high resistance ratio of ~106. The Cu/Ta2O5/Pt devices showed good data retention up to 103 s. The resistive switching mechanism in Cu/Ta2O5/Pt devices was understood in terms of redox reaction based formation and rupturing of conducting filaments constituting copper ions. The conduction mechanism in LRS was explained on the basis of Ohmic conduction, whereas Schottky emission and space charge limited conduction (SCLC) were found as possible conduction mechanisms in HRS. Our studies clearly show that Ta2O5-based resistive switching devices may have applications in futuristic universal non-volatile memory technology. © 2021, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
  • Item
    Digital Control System Based Isolated Totem Pole Converter for Electric Vehicle Onboard Chargers
    (Institute of Electrical and Electronics Engineers Inc., 2025) Das, A.K.; Raushan, R.; Kumar, P.
    The Totem-Pole converter is well-suited for lowpowered electric vehicle (EV) applications. The isolated configurations of such converters provide single-stage power conversion that overcomes the more conversion stages. A robust controller can satisfy the converter operations efficiently for on-board charging applications. In this paper, a modified digital control method for totem-pole PFC cascaded active flyback DC-DC converters functioning in discontinuous conduction mode (DCM) is proposed. The auxiliary switch and clamp capacitor are used to recycle the stored energy in the transformer to reduce the spike voltage. The main purpose of adding PFC is to obtain the input current in phase with the input voltage, keeping total harmonic distortion (THD) low to improve the efficiency of the converter. © 2025 IEEE.