Browsing by Author "Hegde, G.R."

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    Simulation and Modelling of screen oxide thickness dependent implantation peak position in Silicon
    (Institute of Electrical and Electronics Engineers Inc., 2020) Hegde, G.R.; Nikhil, K.S.; Rao, R.
    The relation between peak boron concentration position from the silicon-silicon dioxide interface (xp) after implantation through screen oxide with oxide thickness of (tox) is investigated in this paper. It is observed that the xp decreases with increase in tox. The rate of reduction is observed to be significantly higher for thin oxides. An empirical relation is proposed to model the oxide thickness dependent peak position with appropriate model parameters. © 2020 IEEE.