Simulation and Modelling of screen oxide thickness dependent implantation peak position in Silicon
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Date
2020
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Journal ISSN
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Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
The relation between peak boron concentration position from the silicon-silicon dioxide interface (xp) after implantation through screen oxide with oxide thickness of (tox) is investigated in this paper. It is observed that the xp decreases with increase in tox. The rate of reduction is observed to be significantly higher for thin oxides. An empirical relation is proposed to model the oxide thickness dependent peak position with appropriate model parameters. © 2020 IEEE.
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Keywords
Boron implantation, oxide thickness, peak concentration position
Citation
Proceedings of CONECCT 2020 - 6th IEEE International Conference on Electronics, Computing and Communication Technologies, 2020, Vol., , p. -