Browsing by Author "Ashwini, N."

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    Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET
    (Elsevier Ltd, 2025) Ashwini, N.; Nikhil, K.S.
    In this work, temperature dependent linearity parameters of Galliun Nitride (GaN, a wide gap material) based Junctionless Drain Extended FinFETs (JLDEFinFETs) for a temperature ranging from 100K to 450K are investigated using 3D thermodynamic TCAD simulation. An analysis of the transfer characteristics, off-current, transconductance, and its derivatives are carried out at various temperatures. Additionally, the impact of various linearity parameters, such as VIP2, VIP3, IIP3, IMD3, and the 1-dB compression point on temperature is studied in detail. The device under consideration has a metal gate contact which offers opportunities to tune its performance parameters like on-current, off-current and threshold voltage. A comparative analysis of the designed device with various devices is also carried out to validate the device design. © 2025 Elsevier Ltd