Statistics for Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: A synergistic effect leading to a record high room temperature ZT in tin telluride
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| Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: A synergistic effect leading to a record high room temperature ZT in tin telluride | 3 |
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| 15.Electronic structure.pdf | 7 |