Devaraj, N.Tarafder, K.2026-02-052020Journal of Physics Condensed Matter, 2020, 33, 6, pp. -9538984https://doi.org/10.1088/1361-648X/abc4eehttps://idr.nitk.ac.in/handle/123456789/23620Spin transport through monolayer and trilayers of molybdenum dichalcogenides were studied considering Co as leads. Detailed investigations of the electronic structure of the Co/MoS2 interface and magnetic tri-junctions are carried out by using density functional theory calculations to understand transport behavior. The study revealed that new spin-polarized hybridized states appeared at the Fermi level due to the formation of Co/MoS2 interface that effectively acted as a spin filter and enhanced the spin injection efficiency of the systems. Spin-polarized current through the system as well as the magnetoresistance (MR) was estimated at different applied bias voltages. Large MR up to 78% was calculated for the trilayer MoS2 system at a relatively high applied bias voltage. The MR values are further improved by tuning the structure of the scattering region. A very large MR of 123% for MoS2/MoSe2/MoS2 trilayer at an applied bias 0.8 V was observed, which is much higher than the previously reported bias dependent MR values in similar systems. © 2020 IOP Publishing Ltd.Bias voltageCalculationsDensity functional theoryElectronic structureInterface statesLayered semiconductorsMolybdenum compoundsSpin polarizationApplied bias voltageDichalcogenidesFirst-principles calculationScattering regionsSpin polarized currentsSpin transportSpin-injection efficiencyTransport behaviorSpin fluctuations