Vallem, V.Bangera, K.V.Shivakumar, G.K.2026-02-052017Ceramics International, 2017, 43, 4, pp. 3748-37512728842https://doi.org/10.1016/j.ceramint.2016.12.008https://idr.nitk.ac.in/handle/123456789/25675In<inf>2</inf>Te<inf>3</inf> thin films were grown by thermal evaporation technique. The annealing of films played a major role to obtain stoichiometry, regardless of substrate temperature. Annealing at 300 ?C resulted in well oriented, mono-phased and nearly stoichiometric In<inf>2</inf>Te<inf>3</inf> thin films. The variation in grain size of In<inf>2</inf>Te<inf>3</inf> films associated with the substrate temperatures provides a significant control over the resistivity of the films, and the resistivity decreased with an increase in the grain size. The activation energy and optical band gap of stoichiometric In<inf>2</inf>Te<inf>3</inf> films were found to be 0.01±0.005 eV and 0.99±0.02 eV, respectively. The absorption co-efficient of these films was found to be of the order of 105 cm?1. © 2016 Elsevier Ltd and Techna Group S.r.l.Activation energyAnnealingEnergy gapEvaporationGrain size and shapeOptical propertiesThermal evaporationAbsorption co-efficientElectrical and optical propertiesGrain sizeSubstrate temperatureThermal evaporation techniqueThin films