Acharya, S.Bangera, K.V.Shivakumar, G.K.2026-02-052015Applied Nanoscience (Switzerland), 2015, 5, 8, pp. 1003-100721905509https://doi.org/10.1007/s13204-015-0406-xhttps://idr.nitk.ac.in/handle/123456789/26191In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II–VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV. © 2015, The Author(s).Cadmium tellurideElectric propertiesEnergy gapII-VI semiconductorsInterfaces (materials)Thermal evaporationThin filmsBand gap differenceDevice performanceDiffusion potentialElectrical characterizationElectrical conduction mechanismsPhotovoltaic conversionRectification behaviorThermal evaporation techniqueHeterojunctions