Sadananda Kumar, N.Bangera, K.V.Shivakumar, G.K.2026-02-052015Semiconductors, 2015, 49, 7, pp. 899-90410637826https://doi.org/10.1134/S1063782615070143https://idr.nitk.ac.in/handle/123456789/26251Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm2 V–1 s–1, and a hole concentration of 6.25 × 1017 cm–3. © 2015, Pleiades Publishing, Ltd.