Palimar, S.Bangera, K.V.Shivakumar, G.K.2026-02-052012Semiconductors, 2012, 46, 12, pp. 1545-154810637826https://doi.org/10.1134/S1063782612120135https://idr.nitk.ac.in/handle/123456789/26894Amorphous zinc oxide thin films are obtained by thermally evaporating pure zinc oxide powder. Films obtained have an excellent conductivity of 90 ?-1 cm-1 with transparency of up to 90% in the visible region. On doping with gallium oxide a great improvement in the conductivity of up to 8. 7 × 103 ?-1 cm-1 is observed and the optical band gap of the films is decreased from 3. 25 to 3. 2 eV, retaining the transparency. Measurements of activation energy show that the doped ZnO film has one donor level at 68 meV and other at 26 meV bellow the conduction band. © 2012 Pleiades Publishing, Ltd.