Fernandes, J.M.Raveendra Kiran, M.R.Ulla, H.Satyanarayan, M.N.Umesh, G.2026-02-052014Superlattices and Microstructures, 2014, 76, , pp. 385-3937496036https://doi.org/10.1016/j.spmi.2014.10.026https://idr.nitk.ac.in/handle/123456789/26573The charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F<inf>4</inf>TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F<inf>4</inf>TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. © 2014 Elsevier Ltd. All rights reserved.Charge injectionDoping (additives)Electric impedanceProduct developmentCapacitance voltageCharge accumulationHole-injection layersImpedance measurementImpedance spectroscopyOrganic interfacesSequential depositionSpectroscopic techniqueCapacitance