Lokesh, R.Udayashankar, N.K.Asokan, S.2026-02-052010Journal of Non-Crystalline Solids, 2010, 356, 46240, pp. 321-325223093https://doi.org/10.1016/j.jnoncrysol.2009.11.035https://idr.nitk.ac.in/handle/123456789/27494Studies on the electrical switching behavior of melt quenched bulk Si<inf>15</inf>Te<inf>85-x</inf>Sb<inf>x</inf> glasses have been undertaken in the composition range (1 ? x ? 10), in order to understand the effect of Sb addition on the electrical switching behavior of Si<inf>15</inf>Te<inf>85-x</inf> base glass. It has been observed that all the Si<inf>15</inf>Te<inf>85-x</inf>Sb<inf>x</inf> glasses studied exhibit a smooth memory type switching. Further, the switching voltages are found to decrease almost linearly with Sb content, which indicates that the metallicity of the dopant plays a dominant role in this system compared to network connectivity/rigidity. The thickness dependence of switching voltage (V<inf>th</inf>) indicates a clear thermal origin for the switching mechanism. The temperature variation of switching voltages reveals that the Si<inf>15</inf>Te<inf>85-x</inf>Sb<inf>x</inf> glasses studied have a moderate thermal stability. © 2009 Elsevier B.V. All rights reserved.Chalcogenide glassComposition rangesCompositional dependenceElectrical switchingHigh fieldHigh field effectsMetallicitiesSwitching mechanismSwitching voltagesTemperature variationThermal originsThermal stabilityThickness dependenceChalcogenidesGlassPhase change memorySiliconTellurium compoundsSwitching